Electrochemical intercalation in atomically thin van der Waals materials for structural phase transition and device applications
In van der Waals (vdWs) materials and heterostructures, the interlayers are bonded by weak
vdWs interactions due to the lack of dangling bonds. The vdWs gap at the homo‐or …
vdWs interactions due to the lack of dangling bonds. The vdWs gap at the homo‐or …
Asymmetric Schottky Contacts in Bilayer MoS2 Field Effect Transistors
The high‐bias electrical characteristics of back‐gated field‐effect transistors with chemical
vapor deposition synthesized bilayer MoS2 channel and Ti Schottky contacts are discussed …
vapor deposition synthesized bilayer MoS2 channel and Ti Schottky contacts are discussed …
Interfacial Properties of Monolayer and Bilayer MoS2 Contacts with Metals: Beyond the Energy Band Calculations
Although many prototype devices based on two-dimensional (2D) MoS2 have been
fabricated and wafer scale growth of 2D MoS2 has been realized, the fundamental nature of …
fabricated and wafer scale growth of 2D MoS2 has been realized, the fundamental nature of …
Work function variation of MoS2 atomic layers grown with chemical vapor deposition: The effects of thickness and the adsorption of water/oxygen molecules
The electrical properties of two-dimensional atomic sheets exhibit remarkable dependences
on layer thickness and surface chemistry. Here, we investigated the variation of the work …
on layer thickness and surface chemistry. Here, we investigated the variation of the work …
Photoluminescence of monolayer MoS 2 on LaAlO 3 and SrTiO 3 substrates
In an atomically thin-film/dielectric-substrate heterostructure, the elemental physical
properties of the atomically thin-film are influenced by the interaction between the thin-film …
properties of the atomically thin-film are influenced by the interaction between the thin-film …
Adsorption of nucleobases on 2D transition-metal dichalcogenides and graphene sheet: a first principles density functional theory study
Adsorption characteristics of DNA/RNA nucleobases on monolayers of transition-metal
dichalcogenide (TMD) such as molybdenum disulfide (MoS2) and tungsten disulfide (WS2) …
dichalcogenide (TMD) such as molybdenum disulfide (MoS2) and tungsten disulfide (WS2) …
Highly uniform trilayer molybdenum disulfide for wafer‐scale device fabrication
Molybdenum disulfide (MoS2) is a layered semiconducting material with a tunable bandgap
that is promising for the next generation nanoelectronics as a substitute for graphene or …
that is promising for the next generation nanoelectronics as a substitute for graphene or …
Strain-induced work function in h-BN and BCN monolayers
In the last decade, research activities of semiconducting two-dimensional (2D) electronic
materials has received widespread attention, and the work function analysis is a significant …
materials has received widespread attention, and the work function analysis is a significant …
Band structure engineering through van der Waals heterostructing superlattices of two‐dimensional transition metal dichalcogenides
The indirect‐to‐direct band‐gap transition in transition metal dichalcogenides (TMDCs) from
bulk to monolayer, accompanying with other unique properties of two‐dimensional …
bulk to monolayer, accompanying with other unique properties of two‐dimensional …
Effect of flexoelectricity on a bilayer molybdenum disulfide Schottky contact
Abstract Molybdenum disulfide (MoS 2), as a representative two-dimensional material, has
distinctive physical and mechanical properties, especially in a bilayer form. Here, we …
distinctive physical and mechanical properties, especially in a bilayer form. Here, we …