Graphene/semiconductor hybrid heterostructures for optoelectronic device applications

C Xie, Y Wang, ZX Zhang, D Wang, LB Luo - Nano Today, 2018 - Elsevier
As one of the most appealing two-dimensional materials, graphene (Gr) has attracted
tremendous research interest in optoelectronic device applications for its plenty of …

SiC detectors: A review on the use of silicon carbide as radiation detection material

M De Napoli - Frontiers in physics, 2022 - frontiersin.org
Silicon Carbide (SiC) is a wide bandgap semiconductor with many excellent properties that
make it one of the most promising and well-studied materials for radiation particle detection …

First-principles study of defects and adatoms in silicon carbide honeycomb structures

E Bekaroglu, M Topsakal, S Cahangirov, S Ciraci - Physical Review B …, 2010 - APS
We present a study of mechanical, electronic and magnetic properties of two-dimensional
(2D), monolayer of silicon carbide (SiC) in honeycomb structure and its quasi-one …

Silicon carbide and its use as a radiation detector material

F Nava, G Bertuccio, A Cavallini… - … Science and Technology, 2008 - iopscience.iop.org
We present a comprehensive review of the properties of the epitaxial 4H silicon carbide
polytype (4H–SiC). Particular emphasis is placed on those aspects of this material related to …

Integrated 64 pixel UV image sensor and readout in a silicon carbide CMOS technology

J Romijn, S Vollebregt, LM Middelburg… - Microsystems & …, 2022 - nature.com
This work demonstrates the first on-chip UV optoelectronic integration in 4H-SiC CMOS,
which includes an image sensor with 64 active pixels and a total of 1263 transistors on a …

High-performance 4H-SiC-based ultraviolet pin photodetector

X Chen, H Zhu, J Cai, Z Wu - Journal of Applied Physics, 2007 - pubs.aip.org
A high-performance 4H-SiC pin photodetector for visible-blind ultraviolet (UV) applications
has been designed and fabricated. The electrical and optical characteristics were measured …

Flexible self-powered photoelectrochemical-type photodetector based on 2D WS2-graphene heterojunction

X Ren, B Wang, Z Huang, H Qiao, C Duan, Y Zhou… - FlatChem, 2021 - Elsevier
Flexible devices have attracted enormous attention in recent years due to the rapid
development of portable electronic devices. As a neoteric photodetector, superior …

[HTML][HTML] Integration of graphene and MoS2 on silicon carbide: Materials science challenges and novel devices

F Giannazzo, SE Panasci, E Schilirò, A Koos… - Materials Science in …, 2024 - Elsevier
Although silicon carbide (SiC) is widely regarded as the material of choice for power
electronics, the development of several new applications on the SiC material platform is …

Self-driven visible-blind photodetector based on ferroelectric perovskite oxides

J Li, C Ge, K Jin, J Du, J Yang, H Lu, G Yang - Applied Physics Letters, 2017 - pubs.aip.org
Ultraviolet photodetectors have attracted considerable interest for a variety of applications in
health, industry, and science areas. Self-driven visible-blind photodetectors represent an …

Surface and interface issues in wide band gap semiconductor electronics

F Roccaforte, F Giannazzo, F Iucolano, J Eriksson… - Applied Surface …, 2010 - Elsevier
Wide band gap (WGB) materials are the most promising semiconductors for future electronic
devices, and are candidates to replace the conventional materials (Si, GaAs,…) that are …