Graphene/semiconductor hybrid heterostructures for optoelectronic device applications
As one of the most appealing two-dimensional materials, graphene (Gr) has attracted
tremendous research interest in optoelectronic device applications for its plenty of …
tremendous research interest in optoelectronic device applications for its plenty of …
SiC detectors: A review on the use of silicon carbide as radiation detection material
M De Napoli - Frontiers in physics, 2022 - frontiersin.org
Silicon Carbide (SiC) is a wide bandgap semiconductor with many excellent properties that
make it one of the most promising and well-studied materials for radiation particle detection …
make it one of the most promising and well-studied materials for radiation particle detection …
First-principles study of defects and adatoms in silicon carbide honeycomb structures
We present a study of mechanical, electronic and magnetic properties of two-dimensional
(2D), monolayer of silicon carbide (SiC) in honeycomb structure and its quasi-one …
(2D), monolayer of silicon carbide (SiC) in honeycomb structure and its quasi-one …
Silicon carbide and its use as a radiation detector material
F Nava, G Bertuccio, A Cavallini… - … Science and Technology, 2008 - iopscience.iop.org
We present a comprehensive review of the properties of the epitaxial 4H silicon carbide
polytype (4H–SiC). Particular emphasis is placed on those aspects of this material related to …
polytype (4H–SiC). Particular emphasis is placed on those aspects of this material related to …
Integrated 64 pixel UV image sensor and readout in a silicon carbide CMOS technology
J Romijn, S Vollebregt, LM Middelburg… - Microsystems & …, 2022 - nature.com
This work demonstrates the first on-chip UV optoelectronic integration in 4H-SiC CMOS,
which includes an image sensor with 64 active pixels and a total of 1263 transistors on a …
which includes an image sensor with 64 active pixels and a total of 1263 transistors on a …
High-performance 4H-SiC-based ultraviolet pin photodetector
X Chen, H Zhu, J Cai, Z Wu - Journal of Applied Physics, 2007 - pubs.aip.org
A high-performance 4H-SiC pin photodetector for visible-blind ultraviolet (UV) applications
has been designed and fabricated. The electrical and optical characteristics were measured …
has been designed and fabricated. The electrical and optical characteristics were measured …
Flexible self-powered photoelectrochemical-type photodetector based on 2D WS2-graphene heterojunction
Flexible devices have attracted enormous attention in recent years due to the rapid
development of portable electronic devices. As a neoteric photodetector, superior …
development of portable electronic devices. As a neoteric photodetector, superior …
[HTML][HTML] Integration of graphene and MoS2 on silicon carbide: Materials science challenges and novel devices
Although silicon carbide (SiC) is widely regarded as the material of choice for power
electronics, the development of several new applications on the SiC material platform is …
electronics, the development of several new applications on the SiC material platform is …
Self-driven visible-blind photodetector based on ferroelectric perovskite oxides
Ultraviolet photodetectors have attracted considerable interest for a variety of applications in
health, industry, and science areas. Self-driven visible-blind photodetectors represent an …
health, industry, and science areas. Self-driven visible-blind photodetectors represent an …
Surface and interface issues in wide band gap semiconductor electronics
Wide band gap (WGB) materials are the most promising semiconductors for future electronic
devices, and are candidates to replace the conventional materials (Si, GaAs,…) that are …
devices, and are candidates to replace the conventional materials (Si, GaAs,…) that are …