A critical review of design and fabrication challenges in InP HEMTs for future terahertz frequency applications
This article critically reviews the materials, processing and reliability of InP high electron
mobility transistors (InP HEMTs) for future terahertz wave applications. The factors such as …
mobility transistors (InP HEMTs) for future terahertz wave applications. The factors such as …
InP high electron mobility transistors for submillimetre wave and terahertz frequency applications: A review
This paper reviews the rapid advancements being made in the development of high electron
mobility transistors (HEMTs) on InP substrates for future sub-millimetre wave (30–300 GHz) …
mobility transistors (HEMTs) on InP substrates for future sub-millimetre wave (30–300 GHz) …
InP HEMTs for sub-mW cryogenic low-noise amplifiers
This paper reports on a 100-nm gate length InP high-electron-mobility transistor (HEMT)
technology for cryogenic low-noise amplifiers (LNAs) with ultra-low power dissipation of 112 …
technology for cryogenic low-noise amplifiers (LNAs) with ultra-low power dissipation of 112 …
A 300-µW cryogenic HEMT LNA for quantum computing
This paper reports on ultra-low power 4–8 GHz (C-band) InP high-electron mobility transistor
(HEMT) cryogenic low-noise amplifiers (LNAs) aimed for qubit amplification in quantum …
(HEMT) cryogenic low-noise amplifiers (LNAs) aimed for qubit amplification in quantum …
0.3–14 and 16–28 GHz wide-bandwidth cryogenic MMIC low-noise amplifiers
We present two monolithic microwave integrated circuit (MMIC) cryogenic broadband low-
noise amplifiers (LNAs) based on the 100 nm gate length InP high-electron mobility …
noise amplifiers (LNAs) based on the 100 nm gate length InP high-electron mobility …
A 50-nm gate-length metamorphic HEMT technology optimized for cryogenic ultra-low-noise operation
This article reports on the investigation and optimization of cryogenic noise mechanisms in
InGaAs metamorphic high-electron-mobility transistors (mHEMTs). HEMT technologies with …
InGaAs metamorphic high-electron-mobility transistors (mHEMTs). HEMT technologies with …
Lg= 25 nm InGaAs/InAlAs high-electron mobility transistors with both fT and fmax in excess of 700 GHz
In this paper, we report an L g= 25 nm InGaAs/InAlAs HEMT on InP substrate that delivers
excellent high-frequency characteristics. The device exhibited a value of maximum …
excellent high-frequency characteristics. The device exhibited a value of maximum …
Low-noise amplifier for next-generation radio astronomy telescopes: Review of the state-of-the-art cryogenic LNAs in the most challenging applications
CC Chiong, Y Wang, KC Chang… - IEEE Microwave …, 2021 - ieeexplore.ieee.org
Radio astronomy is a subfield of astronomy that explores the universe via radio signals up to
a few terahertz. Since the first detection of radio signals from the Milky Way by Karl G. Jansky …
a few terahertz. Since the first detection of radio signals from the Milky Way by Karl G. Jansky …
Squeezed state generation using cryogenic InP HEMT nonlinearity
A Salmanogli - Journal of Semiconductors, 2023 - iopscience.iop.org
This study focuses on generating and manipulating squeezed states with two external
oscillators coupled by an InP HEMT operating at cryogenic temperatures. First, the small …
oscillators coupled by an InP HEMT operating at cryogenic temperatures. First, the small …
A comparative study on radiation reliability of composite channel InP high electron mobility transistors
JJ Zhang, P Ding, YN Jin, SH Meng, XQ Zhao… - Chinese …, 2021 - iopscience.iop.org
This paper proposes a reasonable radiation-resistant composite channel structure for InP
HEMTs. The simulation results show that the composite channel structure has excellent …
HEMTs. The simulation results show that the composite channel structure has excellent …