Radiation damage in silicon detectors Page 1 RIVISTA DEL NUOVO CIMENTO VOL. 17, N. 11
1994 Radiation Damage in Silicon Detectors. E. BORCm and M. BRUZZI Dipartim~nto di …

Deep level transient Fourier spectroscopy (DLTFS) has been performed on p–n diodes of
GaN. Typical deep level spectra of the various diodes realized on the same wafer …

A comparative study is made on the radiation damage caused by fast‐pile neutrons in n‐Si
with low and high concentrations of oxygen by measuring the effective carrier concentrations …

The issue of crystallization of silicon oxide at low temperatures is a topical issue for the
electronics of the future. Organosilicon oligomers and polymers are “ideal” sources for …

The effect of an ultrasonic treatment (UST) in various regimes (f UST= 4− 30 MHz; W UST=
0.1− 2 W/cm 2) on the electrical activity of radiation defects in γ-irradiated (D= 10 8 and 10 9 …

Annealing of the main radiation defects in silicon (A-centers, E-centers, and divacancies,
etc.) is theoretically described on the basis of the experimental data obtained by many …

The generation and annihilation of deep levels in diodes fabricated on nand p-type floating
zone and Czochralski silicon substrates is discussed as a function of the substrate …

Теоретически описан отжиг основных радиационных дефектов в кремнии (А-центров,
Е-центров, дивакансий и т. д.) на основе экспериментальных данных, полученных …

Characterization of dominant electron trap in as-grown SiC epilayers has been carried out
using deep level transient spectroscopy. Two electron traps E 1 and Z 1 at E c− 0.21 and E …

Представлены результаты исследования влияния ультразвуковой (УЗ) обработки (f
US∼ 4÷ 30 MHz, WUS∼ 0. 1÷ 2 W/cm2) на электрическую активность радиационных …