Border traps in Ge/III–V channel devices: Analysis and reliability aspects
The aim of this review paper is to describe the impact of so-called border traps (BTs) in high-
k gate oxides on the operation and reliability of high-mobility channel transistors. First, a …
k gate oxides on the operation and reliability of high-mobility channel transistors. First, a …
[HTML][HTML] Effect of electron conduction on the read noise characteristics in ReRAM devices
K Schnieders, C Funck, F Cüppers, S Aussen… - APL Materials, 2022 - pubs.aip.org
The read variability of redox based resistive random access memory is one of the key
characteristics with regard to its application in both data storage and novel computation in …
characteristics with regard to its application in both data storage and novel computation in …
A consistent physical framework for N and P BTI in HKMG MOSFETs
A common framework of trap generation and trapping is used to explain Negative Bias
Temperature Instability (NBTI) and Positive Bias Temperature Instability (PBTI) DC and AC …
Temperature Instability (NBTI) and Positive Bias Temperature Instability (PBTI) DC and AC …
[图书][B] Random telegraph signals in semiconductor devices
E Simoen, C Claeys - 2016 - iopscience.iop.org
Following their first observation in 1984, random telegraph signals (RTSs) were initially a
purely scientific tool to study fundamental aspects of defects in semiconductor devices. As …
purely scientific tool to study fundamental aspects of defects in semiconductor devices. As …
Analysis of single-trap-induced random telegraph noise on FinFET devices, 6T SRAM cell, and logic circuits
This paper analyzes the impacts of single-charged-trap-induced random telegraph noise
(RTN) on FinFET devices in tied-and independent-gate modes, 6T static random access …
(RTN) on FinFET devices in tied-and independent-gate modes, 6T static random access …
Localized probing of dielectric breakdown in multilayer hexagonal boron nitride
Hexagonal boron nitride (h-BN) has emerged as a promising 2D/layered dielectric owing to
its successful integration with graphene and other 2D materials, although a coherent picture …
its successful integration with graphene and other 2D materials, although a coherent picture …
[HTML][HTML] Mechanism of random telegraph noise in 22-nm FDSOI-based MOSFET at cryogenic temperatures
Y Ma, J Bi, H Wang, L Fan, B Zhao, L Shen, M Liu - Nanomaterials, 2022 - mdpi.com
In the emerging process-based transistors, random telegraph noise (RTN) has become a
critical reliability problem. However, the conventional method to analyze RTN properties …
critical reliability problem. However, the conventional method to analyze RTN properties …
Electrical characterization of Random Telegraph Noise in Fully-Depleted Silicon-On-Insulator MOSFETs under extended temperature range and back-bias operation
Abstract Random Telegraph Noise (RTN) has been studied in Ultra-Thin Fully-Depleted
Silicon-On-Insulator transistors. A modified Time Lag Plot algorithm has been used to …
Silicon-On-Insulator transistors. A modified Time Lag Plot algorithm has been used to …
Accuracy and issues of the spectroscopic analysis of RTN traps in nanoscale MOSFETs
F Adamu-Lema, CM Compagnoni… - IEEE transactions on …, 2012 - ieeexplore.ieee.org
This paper investigates the limitations to the accuracy and the main issues of the
spectroscopic analyses of random telegraph noise (RTN) traps in nanoscale MOSFETs …
spectroscopic analyses of random telegraph noise (RTN) traps in nanoscale MOSFETs …
MUSTARD: A coupled, stochastic/deterministic, discrete/continuous technique for predicting the impact of random telegraph noise on SRAMs and DRAMs
With aggressive technology scaling and heightened variability, SRAMs and DRAMs have
become vulnerable to Random Telegraph Noise (RTN). The bias-dependent, random …
become vulnerable to Random Telegraph Noise (RTN). The bias-dependent, random …