Selective area doping of GaN toward high-power applications
Selective area doping in GaN, especially p-type, is a critical and inevitable building block for
the realization of advanced device structures for high-power applications, including, but not …
the realization of advanced device structures for high-power applications, including, but not …
OG-FET: An In-Situ xide, aN Interlayer-Based Vertical Trench MOSFET
In this letter, a novel device design to achieve both low ON-resistance and enhancement
mode operation in a vertical GaN FET is demonstrated. In the traditional trench MOSFET …
mode operation in a vertical GaN FET is demonstrated. In the traditional trench MOSFET …
Comparing electrical performance of GaN trench-gate MOSFETs with a-plane and m-plane sidewall channels
GaN trench-gate MOSFETs with m-and a-plane-oriented sidewall channels were fabricated
and characterized. The trench-gate MOSFET performance depended strongly on the …
and characterized. The trench-gate MOSFET performance depended strongly on the …
First demonstration of AlSiO as gate dielectric in GaN FETs; applied to a high performance OG-FET
Gate dielectricplays an integral role in advancing the performance and reliability of GaN-
based transistors. Si-alloying of aluminum oxide (Al 2 O 3) dielectrics have been shown to …
based transistors. Si-alloying of aluminum oxide (Al 2 O 3) dielectrics have been shown to …
A study on the performance of AlGaN/GaN HEMTs regrown on Mg-implanted GaN layers with low channel thickness
P Döring, M Sinnwell, S Müller, H Czap… - … on Electron Devices, 2023 - ieeexplore.ieee.org
In this work, a comprehensive study on the performance of AlGaN/GaN high-electron-
mobility transistors (HEMTs) regrown on Mg-implanted layers is shown. A comparably sharp …
mobility transistors (HEMTs) regrown on Mg-implanted layers is shown. A comparably sharp …
Trenched vertical power field-effect transistors with improved on-resistance and breakdown voltage
Trenched vertical power field-effect transistors with improved on-resistance and/or
breakdown voltage are fab ricated. In one or more embodiments, the modulation of the …
breakdown voltage are fab ricated. In one or more embodiments, the modulation of the …
Recovery of p-GaN surface damage induced by dry etching for the formation of p-type Ohmic contact
J He, Y Zhong, Y Zhou, X Guo, Y Huang… - Applied Physics …, 2019 - iopscience.iop.org
P-type Ohmic contact on the dry-etched p-GaN surface is highly desired for various device
applications with the p-GaN buried underneath by an epitaxial layer or a dielectric layer …
applications with the p-GaN buried underneath by an epitaxial layer or a dielectric layer …
[HTML][HTML] In situ and selective area etching of GaN by tertiarybutylchloride (TBCl)
In situ etching (ISE) of gallium nitride (GaN) can enable lateral and vertical junctions through
selective area etching (SAE) and regrowth. We report the study of ISE and SAE of GaN using …
selective area etching (SAE) and regrowth. We report the study of ISE and SAE of GaN using …
Etched-and-regrown GaN P–N diodes with low-defect interfaces prepared by in situ TBCl etching
The ability to form pristine interfaces after etching and regrowth of GaN is a prerequisite for
epitaxial selective area doping, which in turn is needed for the formation of lateral PN …
epitaxial selective area doping, which in turn is needed for the formation of lateral PN …
AlGaN/GaN heterostructures with an AlGaN layer grown directly on reactive-ion-etched GaN showing a high electron mobility (> 1300 cm2 V− 1 s− 1)
A Yamamoto, S Makino, K Kanatani… - Japanese Journal of …, 2018 - iopscience.iop.org
In this study, the metal–organic-vapor-phase-epitaxial growth behavior and electrical
properties of AlGaN/GaN structures prepared by the growth of an AlGaN layer on a reactive …
properties of AlGaN/GaN structures prepared by the growth of an AlGaN layer on a reactive …