The modulation response of quantum-dot (QD) lasers is studied. Based on a set of four rate
equations, a new analytical modulation transfer function is developed via a small-signal …

We present a multi-population rate equation model for the analysis of the static and dynamic
characteristics of a quantum dot (QD) semiconductor laser. The model is applied to the …

The use of the excited state quantum dot lasers for high speed direct modulation is proposed
and demonstrated. A direct comparison of lasers utilizing the ground state and excited state …

The measured characteristics of excited state lasing in tunnel injection p-doped InAs
quantum dot lasers are reported. Excited state lasing at 1.22 μ m is ensured by a high …

Large signal modulation characteristics of the simultaneous ground-state (GS) and excited-
state (ES) lasing quantum dot lasers are theoretically investigated. Relaxation oscillations of …

The carrier induced refractive index change and linewidth enhancement factor α due to
ground-state (GS) and excited-state (ES) transitions have been compared by measuring the …

Large-signal modulation capability, as an important performance indicator, is directly related
to the high-speed optical communication technology involved. We experimentally and …

Robust photonic integrated circuits (PICs) capable of operating at high temperatures with
low power consumption, low delay, and good signal integrity will be essential for future on …

In this paper, the dynamics of QD semiconductor lasers is investigated numerically. Large
and small signal modulations for various inhomogeneous broadenings have been studied …

در این مقاله مشخصه‌های پهنای نوار مدولاسیون لیزر نقطه کوانتومی InGaAs/GaAs به صورت نظری
مورد بررسی قرار گرفته است. شبیه‌سازی‌ها با استفاده از روش رانگ کوتا مرتبه چهارم انجام گرفته …‎