Recent advances of volatile memristors: Devices, mechanisms, and applications
R Wang, JQ Yang, JY Mao, ZP Wang… - Advanced Intelligent …, 2020 - Wiley Online Library
Due to the rapid development of artificial intelligence (AI) and internet of things (IoTs),
neuromorphic computing and hardware security are becoming more and more important …
neuromorphic computing and hardware security are becoming more and more important …
Memristive devices for computing
Memristive devices are electrical resistance switches that can retain a state of internal
resistance based on the history of applied voltage and current. These devices can store and …
resistance based on the history of applied voltage and current. These devices can store and …
[HTML][HTML] Resistive switching phenomena: A review of statistical physics approaches
Resistive switching (RS) phenomena are reversible changes in the metastable resistance
state induced by external electric fields. After discovery∼ 50 years ago, RS phenomena …
state induced by external electric fields. After discovery∼ 50 years ago, RS phenomena …
Redox-Based Resistive Switching Memories-Nanoionic Mechanisms, Prospects, and Challenges.
R Waser, R Dittmann, G Staikov… - … Materials (Deerfield Beach …, 2009 - europepmc.org
This review article introduces resistive switching processes that are being considered for
nanoelectronic nonvolatile memories. The three main classes are based on an …
nanoelectronic nonvolatile memories. The three main classes are based on an …
Resistive random access memory (ReRAM) based on metal oxides
H Akinaga, H Shima - Proceedings of the IEEE, 2010 - ieeexplore.ieee.org
In this paper, we review the recent progress in the resistive random access memory
(ReRAM) technology, one of the most promising emerging nonvolatile memories, in which …
(ReRAM) technology, one of the most promising emerging nonvolatile memories, in which …
Nanofilamentary resistive switching in binary oxide system; a review on the present status and outlook
This review article summarized the recent understanding of resistance switching (RS)
behavior in several binary oxide thin film systems. Among the various RS materials and …
behavior in several binary oxide thin film systems. Among the various RS materials and …
Direct observation of conversion between threshold switching and memory switching induced by conductive filament morphology
Volatile threshold switching (TS) and non‐volatile memory switching (MS) are two typical
resistive switching (RS) phenomena in oxides, which could form the basis for memory …
resistive switching (RS) phenomena in oxides, which could form the basis for memory …
Nanoscale resistive switching devices: mechanisms and modeling
Resistive switching devices (also termed memristive devices or memristors) are two-terminal
nonlinear dynamic electronic devices that can have broad applications in the fields of …
nonlinear dynamic electronic devices that can have broad applications in the fields of …
Decade of 2D-materials-based RRAM devices: a review
Two dimensional (2D) materials have offered unique electrical, chemical, mechanical and
physical properties over the past decade owing to their ultrathin, flexible, and multilayer …
physical properties over the past decade owing to their ultrathin, flexible, and multilayer …
Thermophoresis/diffusion as a plausible mechanism for unipolar resistive switching in metal–oxide–metal memristors
We show that the SET operation of a unipolar memristor could be explained by
thermophoresis, or the Soret effect, which is the diffusion of atoms, ions or vacancies in a …
thermophoresis, or the Soret effect, which is the diffusion of atoms, ions or vacancies in a …