Recent advances of volatile memristors: Devices, mechanisms, and applications

R Wang, JQ Yang, JY Mao, ZP Wang… - Advanced Intelligent …, 2020 - Wiley Online Library
Due to the rapid development of artificial intelligence (AI) and internet of things (IoTs),
neuromorphic computing and hardware security are becoming more and more important …

Memristive devices for computing

JJ Yang, DB Strukov, DR Stewart - Nature nanotechnology, 2013 - nature.com
Memristive devices are electrical resistance switches that can retain a state of internal
resistance based on the history of applied voltage and current. These devices can store and …

[HTML][HTML] Resistive switching phenomena: A review of statistical physics approaches

JS Lee, S Lee, TW Noh - Applied Physics Reviews, 2015 - pubs.aip.org
Resistive switching (RS) phenomena are reversible changes in the metastable resistance
state induced by external electric fields. After discovery∼ 50 years ago, RS phenomena …

Redox-Based Resistive Switching Memories-Nanoionic Mechanisms, Prospects, and Challenges.

R Waser, R Dittmann, G Staikov… - … Materials (Deerfield Beach …, 2009 - europepmc.org
This review article introduces resistive switching processes that are being considered for
nanoelectronic nonvolatile memories. The three main classes are based on an …

Resistive random access memory (ReRAM) based on metal oxides

H Akinaga, H Shima - Proceedings of the IEEE, 2010 - ieeexplore.ieee.org
In this paper, we review the recent progress in the resistive random access memory
(ReRAM) technology, one of the most promising emerging nonvolatile memories, in which …

Nanofilamentary resistive switching in binary oxide system; a review on the present status and outlook

KM Kim, DS Jeong, CS Hwang - Nanotechnology, 2011 - iopscience.iop.org
This review article summarized the recent understanding of resistance switching (RS)
behavior in several binary oxide thin film systems. Among the various RS materials and …

Direct observation of conversion between threshold switching and memory switching induced by conductive filament morphology

H Sun, Q Liu, C Li, S Long, H Lv, C Bi… - Advanced Functional …, 2014 - Wiley Online Library
Volatile threshold switching (TS) and non‐volatile memory switching (MS) are two typical
resistive switching (RS) phenomena in oxides, which could form the basis for memory …

Nanoscale resistive switching devices: mechanisms and modeling

Y Yang, W Lu - Nanoscale, 2013 - pubs.rsc.org
Resistive switching devices (also termed memristive devices or memristors) are two-terminal
nonlinear dynamic electronic devices that can have broad applications in the fields of …

Decade of 2D-materials-based RRAM devices: a review

MM Rehman, HMMU Rehman, JZ Gul… - … and technology of …, 2020 - Taylor & Francis
Two dimensional (2D) materials have offered unique electrical, chemical, mechanical and
physical properties over the past decade owing to their ultrathin, flexible, and multilayer …

Thermophoresis/diffusion as a plausible mechanism for unipolar resistive switching in metal–oxide–metal memristors

DB Strukov, F Alibart, R Stanley Williams - Applied Physics A, 2012 - Springer
We show that the SET operation of a unipolar memristor could be explained by
thermophoresis, or the Soret effect, which is the diffusion of atoms, ions or vacancies in a …