A paramagnetic neutral CBVN center in hexagonal boron nitride monolayer for spin qubit application

GD Cheng, YG Zhang, L Yan, HF Huang… - Computational Materials …, 2017 - Elsevier
First-principles calculations in combination with group theory analyses were employed to
study the spin-polarized electronic structures of CBVN centers consisting of a nitrogen …

Heteroatom-vacancy centres in molecular nanodiamonds: a computational study of organic molecules possessing triplet ground states through σ-overlap

CM Macarios, J Pittner, VK Prasad… - Physical Chemistry …, 2024 - pubs.rsc.org
Small molecules possessing a triplet ground state are fundamentally intriguing but also in
high demand for applications such as quantum sensing and quantum computing. Such …

Negatively charged boron vacancy center in diamond

T Umeda, K Watanabe, H Hara, H Sumiya, S Onoda… - Physical Review B, 2022 - APS
Impurity-vacancy complexes in diamond are an attractive family of spin defects since NV–, Si
V–, Ge V–, and Sn V–have emerged as promising platforms for quantum applications …

First-principles calculation of a negatively charged boron-vacancy center in diamond

A Kunisaki, M Muruganathan, H Mizuta… - Japanese Journal of …, 2017 - iopscience.iop.org
As the boron doping in diamond has been well established, and a negatively charged boron-
vacancy (BV) center has an active electron paramagnetic resonance, the BV center is an …

Optical and spin coherence properties of NV center in diamond and 3C-SiC

GD Cheng, YP Wan, SY Yan - Computational materials Science, 2018 - Elsevier
We investigated the optical properties and electronic structure of NV− 1 center in diamond
and 3C-SiC by combing photoluminescence spectroscopy (PL) and first-principles …

Dynamics of excitons bound to nitrogen isoelectronic centers in GaAs

P St-Jean, G Éthier-Majcher, S Francoeur - Physical Review B, 2015 - APS
A detailed analysis of the dynamics of excitons bound to two nitrogen atoms forming an
isoelectronic center of C 2 v symmetry in GaAs is presented. The temperature dependence …

Excited state structural analysis (ESSA) for correlated states of spin-flip type: application to electronic excitations in nanodiamonds with defects

AV Luzanov, OA Zhikol - Functional materials, 2016 - dspace.nbuv.gov.ua
The previously developed ESSA for configuration interaction singles (CIS) method is
extended to a more rigorous many-body theory of excited states based on spin-flip (SF) …

Theory of sulfur-vacancy defect in diamond: a comparable NV− 1 isoelectronic center

GD Cheng, Q Huang, YH Shen, HF Huang, L Yan - Optik, 2017 - Elsevier
A color center in diamond which is a comparable NV− 1 isoelectronic center is predicted
based on first-principles electronic structure calculations. The defect consists of a …

About theoretical peculiarities of lowest excitations in modified nanodiamond color centers

AV Luzanov - Functional materials, 2017 - dspace.nbuv.gov.ua
The moderate-size carbon nanoclusters with paramagnetic color centers are studied by
using a rather good-working simplified scheme of CNDOL type. Various electronic structure …

PL and ESR study for defect centers in 4H-SiC induced by oxygen ion implantation

GD Cheng, Y Chen, L Yan, RF Shen - Nuclear Science and Techniques, 2017 - Springer
Radiation damage in 4 H-SiC samples implanted by 70 keV oxygen ion beams was studied
using photoluminescence and electron spin resonance techniques. ESR peak of g= 2.0053 …