Magnetic topological materials in two-dimensional: theory, material realization and application prospects

X Zhang, X Wang, T He, L Wang, WW Yu, Y Liu, G Liu… - Science Bulletin, 2023 - Elsevier
Abstract Two-dimensional (2D) magnetism and nontrivial band topology are both areas of
research that are currently receiving significant attention in the study of 2D materials …

Higher-order topological phases in crystalline and non-crystalline systems: a review

YB Yang, JH Wang, K Li, Y Xu - Journal of Physics: Condensed …, 2024 - iopscience.iop.org
Higher-order topological phases in crystalline and non-crystalline systems: a review Page 1
Journal of Physics: Condensed Matter ACCEPTED MANUSCRIPT • OPEN ACCESS Higher-order …

Magnetic Second‐Order Topological Insulator: An Experimentally Feasible 2D CrSiTe3

X Wang, XP Li, J Li, C Xie, J Wang… - Advanced Functional …, 2023 - Wiley Online Library
Abstract 2D second‐order topological insulators (SOTIs) have sparked significant interest,
but currently, the proposed realistic 2D materials for SOTIs are limited to nonmagnetic …

Second-order topological insulators and tunable topological phase transitions in honeycomb ferromagnets

L Cai, R Li, X Wu, B Huang, Y Dai, C Niu - Physical Review B, 2023 - APS
Intrinsic magnetic topological insulators categorized by bulk-boundary correspondence are
of significant fundamental and technological importance in topotronics. Yet the topological …

3D Carbon Allotropes: Topological Quantum Materials with Obstructed Atomic Insulating Phases, Multiple Bulk‐Boundary Correspondences, and Real Topology

J Wang, TT Zhang, Q Zhang, X Cheng… - Advanced Functional …, 2024 - Wiley Online Library
The study of topological phases with unconventional bulk‐boundary correspondences and
nontrivial real Chern number has garnered significant attention in the topological states of …

Topology-engineered orbital Hall effect in two-dimensional ferromagnets

Z Chen, R Li, Y Bai, N Mao, M Zeer, D Go, Y Dai… - Nano Letters, 2024 - ACS Publications
Recent advances in the manipulation of the orbital angular momentum (OAM) within the
paradigm of orbitronics presents a promising avenue for the design of future electronic …

Half‐Valley Ohmic Contact: Contact‐Limited Valley‐Contrasting Current Injection

X Feng, CS Lau, SJ Liang, CH Lee… - Advanced Functional …, 2024 - Wiley Online Library
The 2D ferrovalley semiconductor (FVSC) with spontaneous valley polarization offers an
exciting material platform for probing Berry phase physics. How FVSC can be incorporated …

Ferrovalley and topological phase transition behavior in monolayer Ru (OH) 2

Y Wu, L Deng, J Tong, X Yin, F Tian, G Qin… - Journal of Materials …, 2023 - pubs.rsc.org
Ferrovalley (FV) materials with outstanding physical properties have garnered significant
attention for their potential to revolutionize next-generation electronic devices. Through first …

Magnetic Second‐Order Topological Insulators in 2H‐Transition Metal Dichalcogenides

G Liu, H Jiang, Z Guo, X Zhang, L Jin, C Liu… - Advanced …, 2023 - Wiley Online Library
The transition metal dichalcogenides, 2H‐VX2 (X= S, Se, Te), are identified as two‐
dimensional second‐order topological insulator (SOTI) with a ferromagnetic ground state by …

Tunable second-order topological insulators in Chern insulators 2H-FeX2 (X= Cl and Br)

X Feng, L Cai, Z Chen, Y Dai, B Huang… - Applied Physics Letters, 2023 - pubs.aip.org
Engineering topological states in two-dimensional (2D) magnets is of pivotal importance to
provide significantly rich physics and application potential. Here, we theoretically …