We report the formation and phase transformation of Bi-containing clusters in $\text
{GaA}{{\text {s}} _ {1-x}} $ Bi $ _ {x} $ epilayers upon annealing. The $\text {GaA}{{\text {s}} …

A model is developed for the elastic stress relaxation via formation of prismatic dislocation
loops in a vicinity of the As–Sb nanoclusters built in GaAs matrix. The model is based on the …

We have elucidated the microstructure of Al 0.28 Ga 0.72 As 0.972 Sb 0.028 metamaterial
containing a developed array of AsSb nanoinclusions. The AlGaAsSb films were grown by …

The elastic behavior of a spherical inclusion with a uniaxial dilatation is considered. As an
example, the experimental data on stressed nanoclusters in doped semiconductors (As-Sb …

The relaxation dynamics of nonequilibrium charge carriers in gallium arsenide epitaxial films
grown by molecular-beam epitaxy at low temperatures has been studied. The growth …

Optical extinction in a metal–semiconductor metamaterial based on a AlGaAs matrix, which
contains random arrays of AsSb plasmon nanoinclusions, is studied. The metamaterial is …

The optical reflectance and transmittance of GaAs structures grown by molecular-beam
epitaxy at a low temperature and periodically δ-doped with antimony or phosphorus are …

Undoped, uniformly Si-doped, and δ-Si-doped GaAs layers grown by molecular-beam
epitaxy on (100)-and (111) A-oriented GaAs substrates at a temperature of 230° C are …

Abstract by molecular-beam epitaxy we have grown epitaxial layers of GaAs1–x Bi x solid
solutions with a bismuth content of 0< x< 0. 02. Structural and optical properties of the layers …

Изучена динамика релаксации неравновесных носителей заряда в эпитаксиальных
пленках арсенида галлия, выращенных методом молекулярно-лучевой эпитаксии при …