Memristor-based neural networks: a bridge from device to artificial intelligence

Z Cao, B Sun, G Zhou, S Mao, S Zhu, J Zhang… - Nanoscale …, 2023 - pubs.rsc.org
Since the beginning of the 21st century, there is no doubt that the importance of artificial
intelligence has been highlighted in many fields, among which the memristor-based artificial …

Oxygen Vacancy Transition in HfOx‐Based Flexible, Robust, and Synaptic Bi‐Layer Memristor for Neuromorphic and Wearable Applications

A Saleem, D Kumar, A Singh… - Advanced Materials …, 2022 - Wiley Online Library
In this work, a reliable bilayer flexible memristor is demonstrated using TaOx/HfOx Bi‐layer
(BL) to mimic synaptic characteristics by using oxygen concentration engineering in the …

High‐Performance and Environmentally Robust Multilevel Lead‐Free Organotin Halide Perovskite Memristors

Z Liu, H Tang, P Cheng, R Kang, J Zhou… - Advanced Electronic …, 2023 - Wiley Online Library
With a striking explosion of digital information, organic–inorganic halide perovskite (OHP)
memristors have been regarded as a promising solution to break the von Neumann …

Low Power Stochastic Neurons From SiO2-Based Bilayer Conductive Bridge Memristors for Probabilistic Spiking Neural Network Applications—Part I: Experimental …

P Bousoulas, C Tsioustas, J Hadfield… - … on Electron Devices, 2022 - ieeexplore.ieee.org
The development of low-power neurons with an intrinsic degree of stochasticity is
considered quite important for the emulation of the respective probabilistic procedures that …

Self-Assembled Au Nanoelectrodes: Enabling Low-Threshold-Voltage HfO2-Based Artificial Neurons

H Dou, Z Lin, Z Hu, BK Tsai, D Zheng, J Song, J Lu… - Nano Letters, 2023 - ACS Publications
Filamentary-type resistive switching devices, such as conductive bridge random-access
memory and valence change memory, have diverse applications in memory and …

Simulation of low power self-selective memristive neural networks for in situ digital and analogue artificial neural network applications

C Tsioustas, P Bousoulas, J Hadfield… - IEEE Transactions …, 2022 - ieeexplore.ieee.org
Self-selective memory devices are considered promising candidates for suppressing the
undesired sneak path currents that appear within crossbar memory structures and …

Conduction mechanism analysis of abrupt-and gradual-switching InGaZnO memristors

WS Choi, MS Song, H Kim, DH Kim - Micromachines, 2022 - mdpi.com
In this work, two types of InGaZnO (IGZO) memristors were fabricated to confirm the
conduction mechanism and degradation characteristics of memristors with different …

Impact of inert electrode on the volatility and non-volatility switching behavior of SiO2-based conductive bridge random access memory devices

C Tsioustas, P Bousoulas, G Kleitsiotis… - Applied Physics …, 2024 - pubs.aip.org
The development of disruptive artificial neural networks (ANNs) endowed with brain-inspired
neuromorphic capabilities is emerging as a promising solution to deal with the challenges of …

Phosphorylation Enables Nano‐Graphene for Tunable Artificial Synapses

Z Zhang, Y Qu, S Chen, S Ke, M Hao… - Advanced Functional …, 2024 - Wiley Online Library
Flexible and robust memristors with controllable resistance‐switching characteristics are
important to neuromorphic computing. However, the nanomaterials‐based, solution …

Emulating low power nociceptive functionalities with a forming-free SiO2/VOx conductive bridge memory with Pt nanoparticles

P Bousoulas, C Tsioustas, D Tsoukalas - Applied Physics Letters, 2022 - pubs.aip.org
The fabrication of low-power and scalable electronic devices that will have the ability to
emulate the properties of the biological nociceptors is of great importance for the …