Tailoring the structural and optical characteristics of InGaN/GaN multilayer thin films by 12 MeV Si ions irradiations
I Ahmad, M Madhuku, A Sadaf, S Khan… - Materials Science in …, 2017 - Elsevier
In this study, the influence of Si ions irradiations (12 MeV energetic) on structural and optical
characteristics of InGaN/GaN thin film has been investigated. Irradiation was performed at …
characteristics of InGaN/GaN thin film has been investigated. Irradiation was performed at …
Depth-resolved confocal micro-Raman spectroscopy for characterizing GaN-based light emitting diode structures
In this work, we demonstrate that depth-resolved confocal micro-Raman spectroscopy can
be used to characterize the active layer of GaN-based LEDs. By taking the depth …
be used to characterize the active layer of GaN-based LEDs. By taking the depth …
Raman scattering by folded acoustic phonons in InGaN/GaN superlattices
We use Raman scattering to investigate the folded longitudinal acoustic (LA) phonons in a
series of InxGa1− xN/GaN superlattices (SLs) grown by molecular beam epitaxy with …
series of InxGa1− xN/GaN superlattices (SLs) grown by molecular beam epitaxy with …
Intrinsic Point Defects in ZnO
V Dhiman, P Choudhary, N Kondal - ZnO and Their Hybrid Nano …, 2023 - books.google.com
ZnO has attracted extraordinary interest as a premier host for dilute magnetic
semiconductors due to its potential usage in optoelectronics, spin light emitting diodes …
semiconductors due to its potential usage in optoelectronics, spin light emitting diodes …
Study of the structures of cleaved cross sections by Raman spectroscopy
SM Plankina, OV Vikhrova, YA Danilov, BN Zvonkov… - Semiconductors, 2016 - Springer
Scanning confocal Raman spectroscopy is used to study the crystal structure of GaAs
irradiated with Mn+ ions with subsequent pulse laser annealing. The scanning of cleaved …
irradiated with Mn+ ions with subsequent pulse laser annealing. The scanning of cleaved …
The Effect of Buffer Types on the In0.82Ga0.18As Epitaxial Layer Grown on an InP (100) Substrate
M Zhang, Z Guo, L Zhao, S Yang, L Zhao - Materials, 2018 - mdpi.com
In0. 82Ga0. 18As epitaxial layers were grown on InP (100) substrates at 530° C by a low-
pressure metalorganic chemical vapor deposition (LP-MOCVD) technique. The effects of …
pressure metalorganic chemical vapor deposition (LP-MOCVD) technique. The effects of …
Depth profiling of strain and carrier concentration by cleaved surface scanning of GaN Gunn-diode: confocal Raman microscopy
Confocal micro-Raman spectroscopy was applied to study the cleaved surface of vertical
GaN Gunn-diode structure grown by molecular-beam epitaxy. The analysis of lateral …
GaN Gunn-diode structure grown by molecular-beam epitaxy. The analysis of lateral …