Van der Waals opto-spintronics
Van der Waals materials with long-range magnetic order show a range of correlated
phenomena that could be of use in the development of optoelectronic and spintronic …
phenomena that could be of use in the development of optoelectronic and spintronic …
Tunnel magnetoresistance of 604% at 300K by suppression of Ta diffusion in CoFeB∕ MgO∕ CoFeB pseudo-spin-valves annealed at high temperature
The authors observed tunnel magnetoresistance (TMR) ratio of 604% at 300 K in Ta∕ Co
20 Fe 60 B 20∕ Mg O∕ Co 20 Fe 60 B 20∕ Ta pseudo-spin-valve magnetic tunnel junction …
20 Fe 60 B 20∕ Mg O∕ Co 20 Fe 60 B 20∕ Ta pseudo-spin-valve magnetic tunnel junction …
Magnetoresistive random access memory
In this paper, a review of the developments in MRAM technology over the past 20 years is
presented. The various MRAM generations are described with a particular focus on spin …
presented. The various MRAM generations are described with a particular focus on spin …
Magnetic tunnel junctions for spintronic memories and beyond
In this paper, recent developments in magnetic tunnel junctions (MTJs) are reported with
their potential impacts on integrated circuits. MTJs consist of two metal ferromagnets …
their potential impacts on integrated circuits. MTJs consist of two metal ferromagnets …
Perpendicular spin transfer torque magnetic random access memories with high spin torque efficiency and thermal stability for embedded applications
Magnetic random access memories based on the spin transfer torque phenomenon (STT-
MRAMs) have become one of the leading candidates for next generation memory …
MRAMs) have become one of the leading candidates for next generation memory …
Bias-driven high-power microwave emission from MgO-based tunnel magnetoresistance devices
AM Deac, A Fukushima, H Kubota, H Maehara… - Nature Physics, 2008 - nature.com
Spin-momentum transfer between a spin-polarized current and a ferromagnetic layer can
induce steady-state magnetization precession, and has recently been proposed as a …
induce steady-state magnetization precession, and has recently been proposed as a …
Tunneling magnetoresistance materials and devices for neuromorphic computing
Artificial intelligence has become indispensable in modern life, but its energy consumption
has become a significant concern due to its huge storage and computational demands …
has become a significant concern due to its huge storage and computational demands …
Oxide spintronics
M Bibes, A Barthelemy - IEEE transactions on electron devices, 2007 - ieeexplore.ieee.org
Concomitant with the development of metal-based spintronics in the late 1980s and 1990s,
important advances were made on the growth of high-quality oxide thin films and …
important advances were made on the growth of high-quality oxide thin films and …
Effect of electrode composition on the tunnel magnetoresistance of pseudo-spin-valve magnetic tunnel junction with a MgO tunnel barrier
The authors investigate the effect of electrode composition on the tunnel magnetoresistance
(TMR) ratio of (Co x Fe 100− x) 80 B 20∕ Mg O∕(Co x Fe 100− x) 80 B 20 pseudo-spin …
(TMR) ratio of (Co x Fe 100− x) 80 B 20∕ Mg O∕(Co x Fe 100− x) 80 B 20 pseudo-spin …
[图书][B] Introduction to spintronics
S Bandyopadhyay, M Cahay - 2008 - taylorfrancis.com
Using spin to replace or augment the role of charge in signal processing devices, computing
systems and circuits may improve speed, power consumption, and device density in some …
systems and circuits may improve speed, power consumption, and device density in some …