The roles of Bi in InAs and InAsBi nanostructure growth
Incorporation of bismuth into the III–V semiconductors expands the bandgap towards the
mid-infrared range by bandgap bowing and spin–orbit splitting, providing new opportunities …
mid-infrared range by bandgap bowing and spin–orbit splitting, providing new opportunities …
High verticality vapor–liquid–solid growth of GaAs 0.99 Bi 0.01 nanowires using Ga–Bi assisted catalytic droplets
GaAsBi nanowires (NWs) are promising for optoelectronic applications in the near-and mid-
infrared wavelengths due to the optical properties of the Bi-containing compound and the …
infrared wavelengths due to the optical properties of the Bi-containing compound and the …
[PDF][PDF] GaAsPBi nanostructures for optoelectronic applications
Various structures for bismuth (Bi) incorporated GaAsP have been studied11, 2. Here, we
extend our study to a new III-V-Bi system by investigating the potential to incorporate Bi into …
extend our study to a new III-V-Bi system by investigating the potential to incorporate Bi into …