The emergence of silicon photonics over the past two decades has established silicon as a
preferred substrate platform for photonic integration. While most silicon-based photonic …

With the emerging trend of big data and internet of things, silicon (Si) photonics technology
has been developed and applied for high‐bandwidth data transmission. Contributed by the …

Strained GeSn alloys are promising for realizing light emitters based entirely on group IV
elements. Here, we report GeSn microdisk lasers encapsulated with a SiN x stressor layer to …

The GeSn detector offers high-performance Si-based infrared photodetectors with
complementary metal-oxide-semiconductor (CMOS) technique compatibility. In this work, we …

Silicon photonics continues to progress tremendously, both in near-infrared
datacom/telecoms and in mid-IR optical sensing, despite the fact a monolithically integrated …

A Si-based monolithic laser is strongly desired for the full integration of Si-photonics. Lasing
from the direct bandgap group-IV GeSn alloy has opened a new avenue, different from the …

Recent demonstrations of optically pumped lasers based on GeSn alloys put forward the
prospect of efficient laser sources monolithically integrated on a Si photonic platform. For …

The integration of efficient, miniaturized group IV lasers into CMOS architecture holds the
key to the realization of fully functional photonic-integrated circuits. Despite several years of …

The success of GeSn alloys as active material for infrared lasers could pave the way toward
a monolithic technology that can be manufactured within mainstream silicon photonics …

Lasing from direct bandgap group-IV GeSn alloys has opened a new venue for the
development of Si-based monolithic laser. In this work, we demonstrate optically pumped …