In this review article, we discuss the molecular beam epitaxy and basic structural, electronic,
optical, excitonic, chemical and catalytic properties of III-nitride nanostructures, including …

Seed particles of elements or compounds which may or may not form alloys are now used
extensively in promoting well-controlled nanowire growth. The technology has evolved …

The unique properties of GaN nanowires grown by molecular beam epitaxy are reviewed.
These properties include the absence of residual strain, exclusion of most extended defects …

The demonstration of vertical GaN wrap-around gated field-effect transistors using GaN
nanowires is reported. The nanowires with smooth a-plane sidewalls have hexagonal …

Analysis of steady-state and transient photoconductivity measurements at room temperature
performed on c-axis oriented GaN nanowires yielded estimates of free carrier concentration …

The three-dimensionality of 3D GaN field-effect transistors (FETs) provides them with unique
advantages compared to their planar counterparts, introducing a promising path towards …

Functional and abundant substrate materials are relevant for applying all sophisticated
semiconductor-based device components such as nanowire arrays. In the case of GaN …

The authors report transport property measurements of individual GaN nanowire field effect
transistors and the correlation of the electron mobilities with the existence of grain …

Characterization of atomic composition and spatially resolved dopant distribution in wide
band gap semiconducting nanowires is critical for their applications in next-generation …

Silicon nanowires present outstanding properties for electronics, energy, and environmental
monitoring applications. However, their integration into microelectromechanical systems …