Abstract Absorption coefficients of GaSb/GaAs quantum dots (QDs) are calculated by the 8-
band strain-dependent k· p method and Fermi's golden rule. A more realistic but simple …

Optical absorption spectra of GaSb/GaAs quantum-ring-with-dot structures (QRDSs) are
calculated using Fermi's golden rule by which the electronic states involved in the optical …

We report the observation of single quantum dot (QD) emission in the telecoms C-band
(1530–1565 nm) from an InAs QD structure grown on a Si substrate. A large red-shift of the …

Abstract Self-assembled GaSb/GaAs quantum-ring-with-dot structures (QRDSs) are the
nanostructures exhibiting type-II band alignment. Each QRDS consists of both quantum ring …

It has been recently reported that multi-shell type-II quantum dot nanocrystals (QDNCs) have
higher quantum yields. Besides these higher quantum yields of multi-shell type-II QDNCs …

Abstract Two-dimensional (2D) simulation of GaAsSb/GaAs quantum dot (QD) solar cells is
presented. The effects of As mole fraction in GaAsSb QDs on the performance of the solar …

Quantum dot intermediate band solar cells involve nanoscale and microscale physical
mechanisms that ultimately decide the operation of the cell in the intermediate band or …

Herein, we present the calculated strain-induced control of single GaAs/AlGaAs quantum
dots (QDs) integrated into semiconductor micropillar cavities. We show precise energy …

Novel solar cell concepts relying on the use of nanostructures requires ad hoc device
modeling tools able to cope with carrier transport and charge transfer mechanisms involving …

Abstract Optimization of GaSb/GaAs quantum dot (QD) size and density for photovoltaics is
theoretically studied by performing simulation in a two-dimensional (2D) aspect. A layer of …