Frequency-Dependent Internal Gate Resistance of SiC Power MOSFETs
S Race, I Kovacevic-Badstuebner… - … on Electron Devices, 2024 - ieeexplore.ieee.org
This article presents an analysis of the internal gate resistance of silicon carbide (SiC) power
MOSFETs and its influence on the dynamic device performance. The internal gate …
MOSFETs and its influence on the dynamic device performance. The internal gate …
Influence of the rds,on temperature dependency of SiC MOSFETs on the optimal switching cell mechanical layout
G Papadopoulos, J Biela - 2023 25th European Conference on …, 2023 - ieeexplore.ieee.org
The design of power electronic systems is typically performed based on optimisation
procedures. In this paper, the influence of the temperature dependant on-state resistance on …
procedures. In this paper, the influence of the temperature dependant on-state resistance on …
High-frequency All SiC Improved Quadratic Boost Converter
LA Nagpala, A Castellazzi - 2023 IEEE Workshop on Wide …, 2023 - ieeexplore.ieee.org
This paper presents the design, development and test of an Improved Quadratic Boost
Converter topology using SiC power MOSFET and Schottky Diodes. Past research has …
Converter topology using SiC power MOSFET and Schottky Diodes. Past research has …
Electro-Mechanical Switching Cell Modelling Framework for Converter Design Optimisation
G Papadopoulos, F Krismer… - 2024 Energy Conversion …, 2024 - ieeexplore.ieee.org
The design of power electronic systems is often performed based on optimisation
procedures. Among the various converter system components, the modelling and …
procedures. Among the various converter system components, the modelling and …
Parasitic extraction of a power management integrated circuit PCB
N Alatalo - 2023 - oulurepo.oulu.fi
In this master's thesis parasitic extraction of a power management integrated circuit was
established and evaluated using Ansys Q3D. From PCB the S21 parameter was extracted …
established and evaluated using Ansys Q3D. From PCB the S21 parameter was extracted …
Gate Drive Design for SiC MOSFET Device Characterization: Investigation into the impact of the gate inductance and resistance on the switching behaviour of SiC …
E Mbah - 2023 - diva-portal.org
Silicon Carbide as a wide-bandgap semiconductor has several physical and electrical
advantages over Silicon for high voltage and high frequency applications. SiC as a MOSFET …
advantages over Silicon for high voltage and high frequency applications. SiC as a MOSFET …