Parasitic capacitive couplings in medium voltage power electronic systems: An overview

BF Kjærsgaard, G Liu, MR Nielsen… - … on Power Electronics, 2023 - ieeexplore.ieee.org
Recent developments within the field of medium voltage wide-bandgap semiconductor
devices are drawing attention from both researchers and industries due to the demanding …

A comparative study on parasitic capacitance in inductors with series or parallel windings

H Zhao, Z Yan, S Luan, DN Dalal… - … on Power Electronics, 2022 - ieeexplore.ieee.org
In high-power medium-voltage applications, inductors usually have multiple windings on a
single core, due to the high inductance value and high current stress. The multiple coils are …

Integrating 10-kV SiC MOSFET into battery energy storage system with a scalable converter-based self-powered gate driver

R Wang, AB Jørgensen, DN Dalal… - IEEE Journal of …, 2022 - ieeexplore.ieee.org
In the hardware design of battery energy storage system (BESS) interface, in order to meet
the high-voltage requirement of grid side, integrating 10-kV silicon-carbide (SiC) MOSFET …

Discovery of Loss Imbalance in SiC Half-Bridge Power Modules–Analysis and Validations

BF Kjærsgaard, G Liu, TS Aunsborg… - … on Power Electronics, 2024 - ieeexplore.ieee.org
It is commonly assumed that power semiconductor switching losses are the same for high-
side and low-side devices in a half-bridge power module. However, this article reveals that …

Behavioral modeling and analysis of ground current in medium-voltage inductors

H Zhao, D Dalal, JK Jørgensen… - … on Power Electronics, 2020 - ieeexplore.ieee.org
This letter proposes a behavioral model for analyzing the ground current in medium-voltage
(MV) inductors. The impedance between the terminals and the ground connection of …

Impacts of the Bottom Copper Layer of Direct-Bond Copper Substrates on the Partial Discharge Performance in Power Modules

Y Gao, K Yin, CL Bak, AB Jørgensen… - … on Power Electronics, 2024 - ieeexplore.ieee.org
This paper studies the impacts of the bottom copper layer of direct-bond copper (DBC)
substrates on the partial discharge (PD) performance of the power modules. Finite element …

Analysis of Volt-Second Error for Medium Voltage SiC MOSFET Power Modules

MR Nielsen, H Zhao, MM Bech… - IEEE Transactions on …, 2024 - ieeexplore.ieee.org
This article presents an analytical derivation of the volt-second error caused by converter
nonlinearities such as dead time and the finite switching speeds of the emerging medium …

Design Guidelines to Reduce Parasitic Capacitance in Planar Inductors

S Luan, S Munk-Nielsen, Z Yan… - 2023 IEEE Applied …, 2023 - ieeexplore.ieee.org
Reduction of parasitic capacitance is essential for planar magnetics, like planar inductors, in
high frequency applications to reduce displacement currents and capacitive losses. The …

An improved bidirectional hybrid switched capacitor converter

D Hulea, M Gireadă, O Cornea… - IECON 2022–48th …, 2022 - ieeexplore.ieee.org
This paper presents an Improved Bidirectional Hybrid Switched Capacitor DC-DC Converter
(I-BHSC). By using switched inductive or capacitive cells, hybrid converters achieve better …

Loss imbalance in SiC half-bridge power module

BF Kjærsgaard, TS Aunsborg… - 2023 IEEE 6th …, 2023 - ieeexplore.ieee.org
Capacitive parasitic couplings in power electronics systems are gaining increased attention
due to the emergence of the wide bandgap devices, with the main challenges being faster …