Parasitic capacitive couplings in medium voltage power electronic systems: An overview
Recent developments within the field of medium voltage wide-bandgap semiconductor
devices are drawing attention from both researchers and industries due to the demanding …
devices are drawing attention from both researchers and industries due to the demanding …
A comparative study on parasitic capacitance in inductors with series or parallel windings
In high-power medium-voltage applications, inductors usually have multiple windings on a
single core, due to the high inductance value and high current stress. The multiple coils are …
single core, due to the high inductance value and high current stress. The multiple coils are …
Integrating 10-kV SiC MOSFET into battery energy storage system with a scalable converter-based self-powered gate driver
In the hardware design of battery energy storage system (BESS) interface, in order to meet
the high-voltage requirement of grid side, integrating 10-kV silicon-carbide (SiC) MOSFET …
the high-voltage requirement of grid side, integrating 10-kV silicon-carbide (SiC) MOSFET …
Discovery of Loss Imbalance in SiC Half-Bridge Power Modules–Analysis and Validations
It is commonly assumed that power semiconductor switching losses are the same for high-
side and low-side devices in a half-bridge power module. However, this article reveals that …
side and low-side devices in a half-bridge power module. However, this article reveals that …
Behavioral modeling and analysis of ground current in medium-voltage inductors
This letter proposes a behavioral model for analyzing the ground current in medium-voltage
(MV) inductors. The impedance between the terminals and the ground connection of …
(MV) inductors. The impedance between the terminals and the ground connection of …
Impacts of the Bottom Copper Layer of Direct-Bond Copper Substrates on the Partial Discharge Performance in Power Modules
This paper studies the impacts of the bottom copper layer of direct-bond copper (DBC)
substrates on the partial discharge (PD) performance of the power modules. Finite element …
substrates on the partial discharge (PD) performance of the power modules. Finite element …
Analysis of Volt-Second Error for Medium Voltage SiC MOSFET Power Modules
This article presents an analytical derivation of the volt-second error caused by converter
nonlinearities such as dead time and the finite switching speeds of the emerging medium …
nonlinearities such as dead time and the finite switching speeds of the emerging medium …
Design Guidelines to Reduce Parasitic Capacitance in Planar Inductors
Reduction of parasitic capacitance is essential for planar magnetics, like planar inductors, in
high frequency applications to reduce displacement currents and capacitive losses. The …
high frequency applications to reduce displacement currents and capacitive losses. The …
An improved bidirectional hybrid switched capacitor converter
This paper presents an Improved Bidirectional Hybrid Switched Capacitor DC-DC Converter
(I-BHSC). By using switched inductive or capacitive cells, hybrid converters achieve better …
(I-BHSC). By using switched inductive or capacitive cells, hybrid converters achieve better …
Loss imbalance in SiC half-bridge power module
BF Kjærsgaard, TS Aunsborg… - 2023 IEEE 6th …, 2023 - ieeexplore.ieee.org
Capacitive parasitic couplings in power electronics systems are gaining increased attention
due to the emergence of the wide bandgap devices, with the main challenges being faster …
due to the emergence of the wide bandgap devices, with the main challenges being faster …