Wide bandgap devices such as gallium nitride (GaN) high electron mobility transistors
(HEMTs) are a promising technology in the field of power electronics. Due to the physical …

This article reports the fabrication and characterization of metal–semiconductor high
electron mobility transistors (MS-HEMT) and metal–oxidesemiconductor (MIS-HEMT) grown …

A Virtual Gate model with surface traps at gate edge of drain side is modelled for
AlGaN/GaN High Electron Mobility Transistor (HEMT). This model confirms the utility of a …

GaN devices offer superior performance over Si devices, such as higher mobility,
breakdown voltage, switching speed and per-width power density. In the future, GaN …

This paper focuses on the effect of single event transients on AlGaN/GaN on sapphire high-
electron-mobility-transistors (HEMTs). This results in a novel study in high performance …

In this article, we present a physics-based subcircuit model for a dual-channel MOS-High
Electron Mobility Transistor (DC-MOS-HEMT), developed within the industry standard …

The self-heating and charge trapping effects are implemented in surface-potential (SP)
based large signal model of AlGaN/GaN HEMTs in this paper. The self-heating effect (SHE) …

L'utilisation conjointe de composants à base de Nitrure de Gallium (GaN) et de la filière du
carbure de Silicium (SiC) permet aux convertisseurs de puissance d'atteindre des …

In this paper, we utilized AlGaN/GaN heterostructure grown on the silicon substrate to
fabricate high current high-electron-mobility transistors (HEMTs). The D-mode MIS-HEMT …