Dilute bismide in which a small amount of bismuth is incorporated to host III-Vs is the least
studied III-V compound semiconductor and has received steadily increasing attention since …

Lasing oscillation at wavelengths up to 1045 nm at room temperature has been realized
from GaAs 1− x Bi x Fabry–Perot laser diodes (FP-LDs) by electrical injection, and the …

An in-situ electron diffraction study of surface reconstructions on (001) oriented GaAs1− xBix
films has been carried out during growth by molecular beam epitaxy on GaAs substrates in …

This study demonstrates long-wavelength emission of up to 1204 nm in photo-pumped
GaAs 1− x Bi x lasers grown by molecular beam epitaxy under low temperature conditions …

We investigated the effect of inserting a compositionally graded layer at the GaAsBi/GaAs
interface on the photovoltaic and light-emission properties of GaAs/GaAsBi pin diodes …

A hole mobility of∼ 200 cm 2 V-1 s-1 was demonstrated for GaAs 1-x Bi x (x≤ 4%). This
value is comparable to that of GaAs with the same hole concentration. The hole mobility of …

We developed a rigorous and exhaustive method for calculating the 0 K surface phase
diagram of Bi/GaAs (001) by using density functional theory in conjunction with the cluster …

GaAs 1− x Bi x alloys attract significant interest due to their potentiality for several
applications, including solar cells. Recent experiments link the crucial optical properties of …

The influence of trimethylbismuth (TMBi) on the GaAs (0 0 1) surface reconstruction is
studied in situ by reflection anisotropy spectroscopy (RAS) in a metal organic vapor phase …

Abstract We demonstrated that poly (3, 4-ethylenedioxythiophene): poly (styrenesulfonate)(
PEDOT: PSS)/GaAs 1–x Bi x organic–inorganic solar cells, which were fabricated by spin …