Effects of dangling bonds and diameter on the electronic and optical properties of InAs nanowires

E Gordanian, S Jalali-Asadabadi, I Ahmad, S Rahimi… - RSC …, 2015 - pubs.rsc.org
In this article we explore the effects of dangling bonds and diameter on the electronic
properties of the wurtzite InAs nanowires (NWs) using the density functional theory. The …

Ab initio study of strained wurtzite InAs nanowires: engineering an indirect–direct band gap transition through size and uniaxial strain

SD Dabhi, PK Jha - RSC advances, 2015 - pubs.rsc.org
This work is focused on the dependence of electronic properties of wurtzite InAs [0001]
nanowires on their size and under uniaxial strain using ab initio calculations. Diameter and …

以第一原理計算小半徑二矽化鎳奈米線的結構與電性性質

ST Cheng - 清華大學材料科學工程學系學位論文, 2009 - airitilibrary.com
Physical properties at the nanoscale are known to be different from those in macro-
dimensions. It was indicated that both structural and electronic properties are dependent on …

[PDF][PDF] خواص الکترونی اپتیکی و فاز توپولوژی نانولایه Li2AgSn

عسکری پور, نوربخش - پژوهش سیستم های بس ذره ای, 2016‎ - jrmbs.scu.ac.ir
در این مقاله ویژگی های الکترونی، اپتیکی و فاز توپولوژی نانولایه Li2AgSn مورد بررسی قرار
گرفته است. محاسبات براساس نظریه تابعی چگالی، بصورت پتانسیل کامل به روش امواج تخت …

Polymorphic MnAs nanowires of a magnetic shape memory alloy

C Echeverría-Arrondo, J Pérez-Conde… - Physical Chemistry …, 2014 - pubs.rsc.org
We describe a magnetic shape memory alloy, in which it is the nanostructural confinement
that influences both the crystal geometry and the electronic and magnetic properties. We use …

Polymorphic nanowires of magnetic shape memory MnAs

C Echeverría-Arrondo, J Pérez-Conde… - arXiv preprint arXiv …, 2010 - arxiv.org
For nanostructured materials, strain is of fundamental importance in stabilizing a specific
crystallographic phase, modifying electronic properties, and in consequence their …