Recent advances in Si-compatible nanostructured photodetectors
R Douhan, K Lozovoy, A Kokhanenko, H Deeb, V Dirko… - Technologies, 2023 - mdpi.com
In this review the latest advances in the field of nanostructured photodetectors are
considered, stating the types and materials, and highlighting the features of operation …
considered, stating the types and materials, and highlighting the features of operation …
Si/Ge phototransistor with responsivity> 1000A/W on a silicon photonics platform
In this article, we report a Si/Ge waveguide phototransistor with high responsivity and low
dark current under low bias voltages, due to an engineered electric field distribution. The …
dark current under low bias voltages, due to an engineered electric field distribution. The …
Reconfigurable integrated photonic filters for optical signal processing using a silicon photonic platform
We present a systematic photonic filter design approach by deploying pole-zero
optimization. The filter transfer function is derived from its specifications by formulating …
optimization. The filter transfer function is derived from its specifications by formulating …
多晶键合层对分离吸收电荷倍增型锗/硅雪崩光电二极管性能的影响
苏小萍， 李嘉辉， 王战仁， 柯少颖 - Journal of the Chinese …, 2024 - opticsjournal.net
摘要分离吸收电荷倍增(SACM) 型Ge/Si 雪崩光电二极管(APD) 因其高速, 低噪声, 高灵敏度,
具备光增益等优点在光通信, 光学成像和安全检测等领域具有广泛的应用前景. 然而由于Si 和Ge …
具备光增益等优点在光通信, 光学成像和安全检测等领域具有广泛的应用前景. 然而由于Si 和Ge …
[引用][C] Design and Implementation of Processes and Components for Optical Beam Forming Networks
D Genuth-Okon - 2023