Fluctuations in resistivity with an approximately 1 f spectrum are found in most conducting
materials. Some of the detailed mechanisms, which turn out to be quite diverse, are explored …

The body of research on (III, Mn) V diluted magnetic semiconductors (DMSs) initiated during
the 1990s has concentrated on three major fronts:(i) the microscopic origins and …

At present, III–V compound semiconductors provide the materials basis for a number of well-
established commercial technologies, as well as new cutting-edge classes of electronic and …

Empirical interatomic potentials permit the calculation of structural properties and energetics
of complex systems. A new approach for constructing such potentials, by explicitly …

Semiconductor heterojunctions and superlattices have recently shown tremendous potential
for device applications because of their flexibility for tailoring the electronic band structure. A …

A dipole-layer approach is presented, which leads to analytic solutions to the potential and
the electronic transport at metal-semiconductor interfaces with arbitrary Schottky-barrier …

After a foreword by Klaus von Klitzing, the first chapters of this book discuss the prehistory
and the theoretical basis as well as the implications of the discovery of the Quantum Hall …

The bonding of Si atoms at the SiO 2/Si interface is determined via high-resolution core-level
spectroscopy with use of synchrotron radiation. All four oxidation states of Si are resolved …

This review is concerned with quantum confinement effects in low-dimensional
semiconductor systems. The emphasis is on the optical properties, including luminescence …

An empirical interatomic potential for covalent systems is proposed, incorporating bond
order in an intuitive way. The potential has the form of a Morse pair potential, but with the …