Recent progress in interface engineering of nanostructures for photoelectrochemical energy harvesting applications

Y Zi, Y Hu, J Pu, M Wang, W Huang - Small, 2023 - Wiley Online Library
With rapid and continuous consumption of nonrenewable energy, solar energy can be
utilized to meet the energy requirement and mitigate environmental issues in the future. To …

Current advances in solar-blind photodetection technology: Using Ga 2 O 3 and AlGaN

U Varshney, N Aggarwal, G Gupta - Journal of Materials Chemistry C, 2022 - pubs.rsc.org
The rapid spread of the novel coronavirus disease (COVID-19) and emergence of different
variants worldwide have caused a pandemic. With the sudden outbreak of this virus …

High-Performance Broadband Photoelectrochemical Photodetectors Based on Ultrathin Bi2O2S Nanosheets

X Yang, L Qu, F Gao, Y Hu, H Yu, Y Wang… - … Applied Materials & …, 2022 - ACS Publications
Two-dimensional (2D) bismuth oxychalcogenide (Bi2O2X, X refers to S, Se, and Te) is one
type of rising semiconductor with excellent electrical transport properties, high …

Boosting photoresponse of self-powered InSe-based photoelectrochemical photodetectors via suppression of interface doping

X Yang, X Liu, L Qu, F Gao, Y Xu, M Cui, H Yu… - ACS …, 2022 - ACS Publications
Two-dimensional (2D) InSe is a good candidate for high-performance photodetectors due to
its good light absorption and electrical transport properties. However, 2D InSe …

Manipulating Surface Band Bending of III‐Nitride Nanowires with Ambipolar Charge‐Transfer Characteristics: A Pathway Toward Advanced Photoswitching Logic …

W Chen, D Wang, W Wang, Y Kang, X Liu… - Advanced …, 2024 - Wiley Online Library
The operational principle of semiconductor devices critically relies on the band structures
that ultimately govern their charge‐transfer characteristics. Indeed, the precise orchestration …

Demonstration of AlGaN/GaN-based ultraviolet phototransistor with a record high responsivity over 3.6× 107 A/W

H Zhang, F Liang, K Song, C Xing, D Wang… - Applied Physics …, 2021 - pubs.aip.org
In this work, we demonstrate a high-performance ultraviolet phototransistor (UVPT) based
on the AlGaN/GaN high-electron mobility transistor (HEMT) configuration. When the device …

Ultrathin In2O3 Nanosheets toward High Responsivity and Rejection Ratio Visible‐Blind UV Photodetection

M Zhang, H Yu, H Li, Y Jiang, L Qu, Y Wang, F Gao… - Small, 2023 - Wiley Online Library
Photoelectrochemical‐type visible‐blind ultraviolet photodetectors (PEC VBUV PDs) have
gained ever‐growing attention due to their simple fabrication processes, uncomplicated …

Achieving Record-High Photoelectrochemical Photoresponse Characteristics by Employing Co3O4 Nanoclusters as Hole Charging Layer for Underwater Optical …

Y Kang, D Wang, Y Gao, S Guo, K Hu, B Liu, S Fang… - ACS …, 2023 - ACS Publications
The physicochemical properties of a semiconductor surface, especially in low-dimensional
nanostructures, determine the electrical and optical behavior of the devices. Thereby, the …

Ga2O3-Based Solar-Blind Position-Sensitive Detector for Noncontact Measurement and Optoelectronic Demodulation

Y Chen, X Yang, C Zhang, G He, X Chen, Q Qiao… - Nano Letters, 2022 - ACS Publications
As a kind of photodetector, position-sensitive-detectors (PSDs) have been widely used in
noncontact photoelectric positioning and measurement. However, fabrications and …

Demonstration of photoelectrochemical‐type photodetectors using seawater as electrolyte for portable and wireless optical communication

Y Luo, D Wang, Y Kang, X Liu, S Fang… - Advanced Optical …, 2022 - Wiley Online Library
The emerging photoelectrochemical‐type photodetector (PEC‐PD), because of its unique
device architecture by using an aqueous electrolyte, is naturally applicable in the pursuit of …