Aluminum nitride piezoelectric thin film, piezoelectric material, piezoelectric component, and method for manufacturing aluminum nitride piezoelectric thin film
K Umeda, M Akiyama, T Nagase, K Nishikubo… - US Patent …, 2019 - Google Patents
US10475984B2 - Aluminum nitride piezoelectric thin film, piezoelectric material,
piezoelectric component, and method for manufacturing aluminum nitride piezoelectric thin …
piezoelectric component, and method for manufacturing aluminum nitride piezoelectric thin …
System and method for increasing group III-nitride semiconductor growth rate and reducing damaging ion flux
WA Doolittle, EA Clinton, CAM Fabien… - US Patent …, 2022 - Google Patents
Abstract Systems and methods for the rapid growth of Group III metal nitrides using plasma
assisted molecular beam epitaxy. The disclosure includes higher pressure and flow rates of …
assisted molecular beam epitaxy. The disclosure includes higher pressure and flow rates of …
Single-crystal rare earth oxide grown on III-V compound
A substrate with a (001) orientation is provided. A gallium arsenide (GaAs) layer is
epitaxially grown on the substrate. The GaAs layer has a reconstruction surface that is a 4× 6 …
epitaxially grown on the substrate. The GaAs layer has a reconstruction surface that is a 4× 6 …