A PCB-embedded 1.2 kV SiC MOSFET half-bridge package for a 22 kW AC–DC converter
This article presents the design and analysis of a double-side-cooled printed circuit board
(PCB) embedded silicon carbide (SiC) MOSFET half-bridge package with low loop …
(PCB) embedded silicon carbide (SiC) MOSFET half-bridge package with low loop …
PCB-based current sensor design for sensing switch current of a nonmodular GaN power semiconductor
UJ Kim, MS Song, RY Kim - Energies, 2020 - mdpi.com
GaN-based power semiconductors exhibit small on-resistance and high dv/dt of the switch
characteristics, thereby enabling the construction of high-efficiency, high-density …
characteristics, thereby enabling the construction of high-efficiency, high-density …
Design and analysis of a PCB-embedded 1.2 kV SiC half-bridge module
This work presents a PCB-embedded silicon carbide (SiC) MOSFET half-bridge module with
low loop inductances, double-sided cooling, and integrated gate driver. 1.2 kV SiC MOSFET …
low loop inductances, double-sided cooling, and integrated gate driver. 1.2 kV SiC MOSFET …
Hard and soft switching losses of a SiC MOSFET module under realistic topology and loading conditions
S Tiwari, JK Langelid, OM Midtgård… - 2017 19th European …, 2017 - ieeexplore.ieee.org
This paper investigates the switching performance of a 1.2 kV half-bridge SiC MOSFET
module from Sanrex. Unlike in a standard SiC MOSFET module, where the MOSFET and the …
module from Sanrex. Unlike in a standard SiC MOSFET module, where the MOSFET and the …
Optimized design for three port transformer considering leakage inductance and parasitic capacitance
R Chattopadhyay, MA Juds, G Gohil… - 2017 IEEE Energy …, 2017 - ieeexplore.ieee.org
The power flow capability of high frequency phase-shifted dc-dc converter depends on
transformer leakage inductance and switching frequency. The design of multi-port …
transformer leakage inductance and switching frequency. The design of multi-port …
Parasitic capacitances and inductances hindering utilization of the fast switching potential of SiC power modules. Simulation model verified by experiment
S Tiwari, OM Midtgård, TM Undeland… - 2017 19th European …, 2017 - ieeexplore.ieee.org
This paper investigates the switching performances of two state-of-the-art half-bridge SiC
MOSFET modules using a standard double pulse test methodology. A deliberate choice of …
MOSFET modules using a standard double pulse test methodology. A deliberate choice of …
An insight into geometry and orientation of capacitors for high-speed power circuits
S Tiwari, TM Undeland… - 2018 IEEE 19th Workshop …, 2018 - ieeexplore.ieee.org
SiC transistors can switch extremely fast. Often turn-off di/dt is reduced to limit the turn-off
over voltages due to the stray inductances in the commutation loops. Thus, the potential low …
over voltages due to the stray inductances in the commutation loops. Thus, the potential low …
SiC MOSFETs an Diodes: Characterization, Applications and Low-Inductive Converter Design Considerations
S Tiwari - 2019 - ntnuopen.ntnu.no
The future power electronic system trends are: higher efficiency, higher power density,
higher operating temperature and lower operation cost of power electronic converters. The …
higher operating temperature and lower operation cost of power electronic converters. The …
PCB-Based 1.2 kV SiC MOSFET Packages for High Power Density Electric Vehicle On-Board Chargers
J Knoll - 2022 - vtechworks.lib.vt.edu
Global energy consumption continues to grow, driving the need for cheap, power-dense
power electronics. Replacing the incumbent silicon insulated gate bipolar transistors with …
power electronics. Replacing the incumbent silicon insulated gate bipolar transistors with …