The development of transparent p‐type oxide semiconductors with good performance may
be a true enabler for a variety of applications where transparency, power efficiency, and …

Atomic layer deposition (ALD) is a deposition technique well‐suited to produce high‐quality
thin film materials at the nanoscale for applications in transistors. This review …

Atomically thin semiconductors are one of the fastest growing categories in materials
science due to their promise to enable high-performance electronic and optical devices …

This article is a review of recent research and development advances in oxide thin film
transistors (TFTs) fabricated by atomic layer deposition (ALD) processes. The ALD process …

Development at the nanoscale has established diverse and complex structures with the help
of a growing selection of materials to choose from. Among the major developments that has …

Atomic layer deposition (ALD) can synthesise materials with atomic-scale precision. The
ability to tune the material composition, film thickness with excellent conformality, allow low …

Here, we demonstrate high-performance p-type thin film transistors (TFTs) with a SnO
channel layer grown by atomic layer deposition (ALD). The performance of the SnO TFTs …

Tin monoxide (SnO) is considered as one of the most important p-type oxides available to
date. Thin films of SnO have been reported to possess both an indirect bandgap (~ 0.7 eV) …

Over the past several decades, tin monoxide (SnO) has been studied extensively as a p-type
thin film transistor (TFT). However, its TFT performance is still insufficient for practical use …

Two-dimensional (2-D) metal chalcogenides have received great attention because of their
unique properties, which are different from bulk materials. A challenge in implementing 2-D …