Imperfections are not 0 K: free energy of point defects in crystals

I Mosquera-Lois, SR Kavanagh, J Klarbring… - Chemical Society …, 2023 - pubs.rsc.org
Defects determine many important properties and applications of materials, ranging from
doping in semiconductors, to conductivity in mixed ionic–electronic conductors used in …

Atomic-scale understanding on the physics and control of intrinsic point defects in lead halide perovskites

J Kang, J Li, SH Wei - Applied Physics Reviews, 2021 - pubs.aip.org
Lead halide perovskites (LHPs) have attracted considerable attention as promising
materials for photovoltaic and optoelectronic applications. Intrinsic point defects play an …

Gate-controlled reversible rectifying behavior investigated in a two-dimensional diode

Q Liu, JJ Li, D Wu, XQ Deng, ZH Zhang, ZQ Fan… - Physical Review B, 2021 - APS
By using density functional theory and ab initio quantum-transport simulation, we study the
Schottky barrier and the rectifying behavior of diodes consisting of the two-dimensional …

High-performance 5.1 nm in-plane Janus WSeTe Schottky barrier field effect transistors

ZQ Fan, ZH Zhang, SY Yang - Nanoscale, 2020 - pubs.rsc.org
Using ab initio quantum-transport simulations, we studied the intrinsic transfer
characteristics and benchmarks of the ballistic performance of 5.1 nm double-gated Schottky …

Defect modeling and control in structurally and compositionally complex materials

X Zhang, J Kang, SH Wei - Nature Computational Science, 2023 - nature.com
Conventional computational approaches for modeling defects face difficulties when applied
to complex materials, mainly due to the vast configurational space of defects. In this …

Transport properties of 5-nm tunnel field-effect transistor for high-performance switches decorated with blue phosphorene and transition metals

XD Huang, Q Liu, HQ Xie, XQ Deng… - … on Electron Devices, 2023 - ieeexplore.ieee.org
Enhancing the band-to-band tunneling (BTBT) is the most effective method to improve the
performance of the tunnel field effect transistors (TFETs). In this article, the transport …

Computational design of quantum defects in two-dimensional materials

Y Ping, TJ Smart - Nature Computational Science, 2021 - nature.com
Missing atoms or atom substitutions (point defects) in crystal lattices in two-dimensional (2D)
materials are potential hosts for emerging quantum technologies, such as single-photon …

Funnel-shaped electronic structure and enhanced thermoelectric performance in ultralight biphenylene networks

F Lv, H Liang, Y Duan - Physical Review B, 2023 - APS
Carbon biphenylene has stimulated substantial research because of extraordinary
properties introduced by the metallic character, eg, the ultrahigh electron thermal transport …

Quasiparticle band structure and optical properties of the Janus monolayer and bilayer SnSSe

P Wang, Y Zong, H Liu, H Wen, HX Deng… - The Journal of …, 2020 - ACS Publications
Two-dimensional (2D) Janus materials with large exciton binding energies have attracted
enormous attention for their novel photoelectric properties. Here, the quasiparticle (QP) …

Elimination of the internal electrostatic field in two-dimensional GaN-based semiconductors

Y Jia, Z Shi, W Hou, H Zang, K Jiang, Y Chen… - npj 2D Materials and …, 2020 - nature.com
GaN-based semiconductors are promising materials for solid-state optoelectronic
applications. However, the strong internal electrostatic field (IEF) along the [0001] direction …