Imperfections are not 0 K: free energy of point defects in crystals
Defects determine many important properties and applications of materials, ranging from
doping in semiconductors, to conductivity in mixed ionic–electronic conductors used in …
doping in semiconductors, to conductivity in mixed ionic–electronic conductors used in …
Atomic-scale understanding on the physics and control of intrinsic point defects in lead halide perovskites
Lead halide perovskites (LHPs) have attracted considerable attention as promising
materials for photovoltaic and optoelectronic applications. Intrinsic point defects play an …
materials for photovoltaic and optoelectronic applications. Intrinsic point defects play an …
Gate-controlled reversible rectifying behavior investigated in a two-dimensional diode
Q Liu, JJ Li, D Wu, XQ Deng, ZH Zhang, ZQ Fan… - Physical Review B, 2021 - APS
By using density functional theory and ab initio quantum-transport simulation, we study the
Schottky barrier and the rectifying behavior of diodes consisting of the two-dimensional …
Schottky barrier and the rectifying behavior of diodes consisting of the two-dimensional …
High-performance 5.1 nm in-plane Janus WSeTe Schottky barrier field effect transistors
ZQ Fan, ZH Zhang, SY Yang - Nanoscale, 2020 - pubs.rsc.org
Using ab initio quantum-transport simulations, we studied the intrinsic transfer
characteristics and benchmarks of the ballistic performance of 5.1 nm double-gated Schottky …
characteristics and benchmarks of the ballistic performance of 5.1 nm double-gated Schottky …
Defect modeling and control in structurally and compositionally complex materials
Conventional computational approaches for modeling defects face difficulties when applied
to complex materials, mainly due to the vast configurational space of defects. In this …
to complex materials, mainly due to the vast configurational space of defects. In this …
Transport properties of 5-nm tunnel field-effect transistor for high-performance switches decorated with blue phosphorene and transition metals
XD Huang, Q Liu, HQ Xie, XQ Deng… - … on Electron Devices, 2023 - ieeexplore.ieee.org
Enhancing the band-to-band tunneling (BTBT) is the most effective method to improve the
performance of the tunnel field effect transistors (TFETs). In this article, the transport …
performance of the tunnel field effect transistors (TFETs). In this article, the transport …
Computational design of quantum defects in two-dimensional materials
Y Ping, TJ Smart - Nature Computational Science, 2021 - nature.com
Missing atoms or atom substitutions (point defects) in crystal lattices in two-dimensional (2D)
materials are potential hosts for emerging quantum technologies, such as single-photon …
materials are potential hosts for emerging quantum technologies, such as single-photon …
Funnel-shaped electronic structure and enhanced thermoelectric performance in ultralight biphenylene networks
F Lv, H Liang, Y Duan - Physical Review B, 2023 - APS
Carbon biphenylene has stimulated substantial research because of extraordinary
properties introduced by the metallic character, eg, the ultrahigh electron thermal transport …
properties introduced by the metallic character, eg, the ultrahigh electron thermal transport …
Quasiparticle band structure and optical properties of the Janus monolayer and bilayer SnSSe
Two-dimensional (2D) Janus materials with large exciton binding energies have attracted
enormous attention for their novel photoelectric properties. Here, the quasiparticle (QP) …
enormous attention for their novel photoelectric properties. Here, the quasiparticle (QP) …
Elimination of the internal electrostatic field in two-dimensional GaN-based semiconductors
Y Jia, Z Shi, W Hou, H Zang, K Jiang, Y Chen… - npj 2D Materials and …, 2020 - nature.com
GaN-based semiconductors are promising materials for solid-state optoelectronic
applications. However, the strong internal electrostatic field (IEF) along the [0001] direction …
applications. However, the strong internal electrostatic field (IEF) along the [0001] direction …