Design and benchmarking of hybrid CMOS-spin wave device circuits compared to 10nm CMOS
In this paper, we present a design and benchmarking methodology of Spin Wave Device
(SWD) circuits based on micromagnetic modeling. SWD technology is compared against a …
(SWD) circuits based on micromagnetic modeling. SWD technology is compared against a …
System technology co-optimization for advanced integration
Advanced integration and packaging will drive the scaling of computing systems in the next
decade. Diversity in performance, cost and scale of the emerging systems implies that …
decade. Diversity in performance, cost and scale of the emerging systems implies that …
DTCO at N7 and beyond: patterning and electrical compromises and opportunities
J Ryckaert, P Raghavan, P Schuddinck… - … Co-optimization for …, 2015 - spiedigitallibrary.org
At 7nm and beyond, designers need to support scaling by identifying the most optimal
patterning schemes for their designs. Moreover, designers can actively help by exploring …
patterning schemes for their designs. Moreover, designers can actively help by exploring …
A paradigm shift in local interconnect technology design in the era of nanoscale multigate and gate-all-around devices
As the technology scales down to the sub-10 nm nodes, the interconnect performance
becomes primarily dominated by the resistance rather than the capacitance due to the ever …
becomes primarily dominated by the resistance rather than the capacitance due to the ever …
Technology/circuit/system co-optimization and benchmarking for multilayer graphene interconnects at sub-10-nm technology node
Based on realistic circuit-and system-level simulations, graphene interconnects are
analyzed in terms of multiple material properties, such as the mean free path (MFP), the …
analyzed in terms of multiple material properties, such as the mean free path (MFP), the …
Application of cell-aware test on an advanced 3nm CMOS technology library
Z Gao, S Malagi, MC Hu, J Swenton… - 2019 IEEE …, 2019 - ieeexplore.ieee.org
Advanced technology nodes employ a large number of innovations. In addition, they
requirescaling boosters' in the design of standard-cell libraries to be able to offer the scaling …
requirescaling boosters' in the design of standard-cell libraries to be able to offer the scaling …
ASAP5: A predictive PDK for the 5 nm node
V Vashishtha, LT Clark - Microelectronics Journal, 2022 - Elsevier
We present a predictive process design kit (PDK) for the 5 nm technology node, the ASAP5
PDK. ASAP5 is not related to a particular foundry and the assumptions are derived from …
PDK. ASAP5 is not related to a particular foundry and the assumptions are derived from …
IR-drop aware Design & technology co-optimization for N5 node with different device and cell height options
L Mattii, DM Milojevic, P Debacker… - 2017 IEEE/ACM …, 2017 - ieeexplore.ieee.org
In this paper we propose a novel Design-Technology Co-Optimization (DTCO) framework
that enables PDK generation and design implementation of sub-10nm technology nodes …
that enables PDK generation and design implementation of sub-10nm technology nodes …
Self-timed shaper circuit for wide memories in advanced cmos technologies
V Nautiyal, G Singla, S Dwivedi, S Singh… - … on Circuits and …, 2018 - ieeexplore.ieee.org
In advanced processes, metal resistance is a limiting factor for performance. At high
temperature, further increase in metal resistance causes pulse width evaporation in critical …
temperature, further increase in metal resistance causes pulse width evaporation in critical …
A smaller, faster, and more energy-efficient complementary stt-mram cell uses three transistors and a ground grid: More is actually less
R Appeltans, P Raghavan, GS Kar… - IEEE transactions on …, 2016 - ieeexplore.ieee.org
Spin-transfer torque magnetoresistance random access memory is a major contender for
static random access memory replacement in embedded caches at advanced fin field effect …
static random access memory replacement in embedded caches at advanced fin field effect …