From tandem solar cell we expect a wide absorption range due to different bandgaps of the
subcells, higher open circuit voltage V oc and finally better photo conversion efficiency η …

The dark current mechanism of extended wavelength In x Ga 1− x As photo-detectors is still
a debated issue. In this paper, the deep-level transient spectroscopy (DLTS) and dark …

We investigated the dark current components of thin planar InGaAs photodiodes grown by
metalorganic vapor-phase epitaxy for optical nano-resonators. Owing to their high electric …

Lattice-matched Ge 1− x− y Si x Sn y (x≤ 0.2, y≤ 0.05) alloys were deposited defect-free on
Ge (001) substrates via low-temperature (330–290 C) reactions of Ge 4 H 10, Si 4 H 10 and …

Previously developed methods used to grow Ge 1− y Sn y alloys on Si are extended to Sn
concentrations in the 10 19− 10 20 cm− 3 range. These concentrations are shown to be …

We report the performance of a 1eV GaNAsSb-based photovoltaic cell grown using a
molecular beam epitaxy system equipped with a radio frequency (RF) plasma-assisted …

Photodiodes are important components in optical data links, and their performance
degradation under irradiation has to be understood in order to guarantee the long-term …

This work presents an investigation of the fully strained GaAsN/GaAs heterostructures
obtained by atmospheric pressure metalorganic vapor phase epitaxy, focusing on the …

In this paper, we report an analysis of reverse current mechanisms observed in GaN
Schottky barrier diodes leading to hysteretic behavior of the I–V curves at low temperature …

Details about the MOVPE growth of thick single crystal CdZnTe layers on (211) Si substrates
are presented. The growth was carried out at a substrate temperature of 650° C, using …