Thin-film InGaAs metamorphic buffer for telecom C-band InAs quantum dots and optical resonators on GaAs platform
R Sittig, C Nawrath, S Kolatschek, S Bauer… - …, 2022 - degruyter.com
The GaAs-based material system is well-known for hosting InAs quantum dots (QDs) with
outstanding optical properties, typically emitting at a wavelength of around 900 nm. The …
outstanding optical properties, typically emitting at a wavelength of around 900 nm. The …
Surfactant mediated epitaxial growth of InxGa1−xAs on GaAs (001)
J Massies, N Grandjean, VH Etgens - Applied physics letters, 1992 - pubs.aip.org
It is shown that Te can be used as a surfactant for the growth of highly strained In x Ga1− x
As on GaAs (001). As observed by reflection high‐energy electron diffraction analysis during …
As on GaAs (001). As observed by reflection high‐energy electron diffraction analysis during …
Critical dimensions for the formation of interfacial misfit dislocations of In0. 6Ga0. 4As islands on GaAs (001)
K Tillmann, A Förster - Thin Solid Films, 2000 - Elsevier
The critical dimensions for the introduction of interfacial misfit dislocations into epitaxially
grown In0. 6Ga0. 4As islands on GaAs (001) substrates are investigated by high-resolution …
grown In0. 6Ga0. 4As islands on GaAs (001) substrates are investigated by high-resolution …
Improved GaInAs/GaAs heterostructures by high growth rate molecular beam epitaxy
N Grandjean, J Massies, M Leroux, J Leymarie… - Applied physics …, 1994 - pubs.aip.org
This work shows that the critical thickness for the two-dimensional-three-dimensional growth
mode transition during the growth of Ga O~~ sInO~ &s on GaAs (OO1) can be significantly …
mode transition during the growth of Ga O~~ sInO~ &s on GaAs (OO1) can be significantly …
Extension of the layer-by-layer growth regime of InxGa1-xAs on GaAs (001)
N Grandjean, J Massies - Semiconductor science and technology, 1993 - iopscience.iop.org
In order to delay the occurrence of the 2D-3D growth mode transition in highly strained In x
Ga 1-x As epitaxial layers grown on GaAs (001) by molecular beam epitaxy, the mass …
Ga 1-x As epitaxial layers grown on GaAs (001) by molecular beam epitaxy, the mass …
Optical studies of highly strained InGaAs/GaAs quantum wells grown on vicinal surfaces
C López, R Mayoral, F Meseguer, JA Porto… - Journal of applied …, 1997 - pubs.aip.org
As a material for microelectronics and optoelectronics, the InxGa1-xAs/GaAs quantum wells
QWs have gained importance due to the expected low effective mass of the carriers as …
QWs have gained importance due to the expected low effective mass of the carriers as …
Effect of surface steps and nonstoichiometry on critical thickness of strained InGaAs layers grown by molecular beam epitaxy on InAlAs/InP heterostructures
M Gendry, V Drouot, G Hollinger, S Mahajan - Applied physics letters, 1995 - pubs.aip.org
It is shown that critical thicknesses of In0. 65Ga0. 35As epilayers, grown by molecular beam
epitaxy on lattice matched InAlAs/InP heterostructures, are affected by surface steps and …
epitaxy on lattice matched InAlAs/InP heterostructures, are affected by surface steps and …
Extended x‐ray‐absorption fine‐structure study of InAs/InP and GaAs/InP strained heterostructures
Extended x-ray-absorption fine-structure measurements have been performed at the As K
edge of GaAs/InP and InAs/InP strained single heterostructures grown by molecular-beam …
edge of GaAs/InP and InAs/InP strained single heterostructures grown by molecular-beam …
An efficient way to improve compositional abruptness at the GaAs on GaInAs interface
E Chirlias, J Massies, JL Guyaux, H Moisan… - Applied physics …, 1999 - pubs.aip.org
Indium surface segregation during the growth of Ga1xInxAs by chemical beam epitaxy is
evidenced in real time by reflection high-energy electron diffraction. An efficient way to …
evidenced in real time by reflection high-energy electron diffraction. An efficient way to …
Localization in highly strained In0. 35Ga0. 65As/GaAs ultrathin quantum wells
We have studied different strained InGaAs/GaAs ultrathin quantum wells grown on vicinal
surfaces for various terrace lengths and In contents. From photoluminescence experiments …
surfaces for various terrace lengths and In contents. From photoluminescence experiments …