Thermally induced fluctuations impose a fundamental limit on precision measurement. In
optical interferometry, the current bounds of stability and sensitivity are dictated by the …

Cavity optomechanics is a rapidly evolving field operating at the intersection of solid-state
physics and modern optics. The fundamental process at the heart of this interdisciplinary …

A microelectromechanical system (MEMS) bond release structure is provided for
manufacturing of three-dimensional integrated circuit (3D IC) devices with two or more tiers …

Quantum dot (QD) laser as a light source for silicon optical integration has attracted great
research attention because of the strategic vision of optical interconnection. In this paper, the …

We report an innovative technique for growing the silicon carbide-on-insulator (SiCOI)
structure by utilizing polycrystalline single layer graphene (SLG) as a buffer layer. The …

This paper presents characterization of the effects of XeF 2 vapor phase etching conditions
on the lateral etch rate and etch uniformity of a sacrificial, epitaxial Nb 2 N layer grown …

In this work, we investigate the bonding processes to improve Germanium-on-insulator (GOI)
quality for III–V integration, and an InGaP LED has been grown and characterized on this …

Film tipis silikon karbida (SiC) telah ditumbuhkan di atas substrate graphene/SiO2/Si
dengan metode Homemade Hot-mesh chemical vapor deposition (Hot-Mesh CVD) …

In this work, we introduce two novel processes for the exfoliation of III-V devices that also
enable the reuse of the substrate for continuous processing. We first investigate a novel …

This paper details the fabrication and characteristics of Schottky-gate InGaP/InGaAs
pseudomorphic high-electron-mobility transistors (PHEMTs) with GaAs-on-insulator (GOI) …