Emerging technologies, such as smart wearable devices, augmented reality (AR)/virtual
reality (VR) displays, and naked-eye 3D projection, have gradually entered our lives …

This article discusses the key challenges and the recent breakthroughs in realizing high-
quality indium (In)-rich indium gallium nitride (InGaN) epilayers and InGaN/GaN multiple …

The full InGaN structure is used to achieve red light emitting diodes (LEDs). This LED
structure is composed of a partly relaxed InGaN pseudo-substrate fabricated by Soitec …

The full InGaN structure was grown on two different InGaNOS substrates from Soitec. An
electron blocking layer was inserted in the full InGaN light emitting diode (LED). Enhanced …

Phase transitions are a common phenomenon in condensed matter and act as a critical
degree of freedom that can be employed to tailor the mechanical or electronic properties of …

Based on density functional theory, we investigate the ferroelectric and piezoelectric
properties of the AlN/ScN superlattice, consisting of ScN and AlN buckled monolayers …

Both two-dimensional (2D) transitional metal dichalcogenides (TMDs) and III–V
semiconductors have been considered as potential platforms for quantum technology. While …

Carbon impurities in GaN form both acceptors and donors. Donor-to-acceptor ratios (DARs)
determine the semi-insulating behavior of carbon-doped GaN (GaN: C) layers and are still …

We identify and characterize a novel type of quantum emitter formed from InGaN monolayer
islands grown using molecular beam epitaxy and further isolated via the fabrication of an …

We report the growth of In x Ga 1− x N/GaN quantum wells (QWs) in metastable-cubic phase
through two well-controlled methods, Migration Enhanced Epitaxy (MEE) and conventional …