This letter demonstrates top-down InGaAs/InAs heterojunction vertical nanowire tunnel FETs
with sub-thermal subthreshold characteristics over two orders of magnitude of current. A …

In this paper, we report the observation of random telegraph noise (RTN) in highly scaled
InGaAs gate-all-around (GAA) MOSFETs fabricated by a top-down approach. RTN and low …

For realizing Ge CMOS devices with a small equivalent oxide thickness (EOT) and a low
density of fast interface states (D it), understanding of slow traps in Ge gate stacks and …

With the downscaling of device dimensions, the variability of metal-oxide-semiconductor
field-effect transistor (MOSFET) electrical behavior is produced by factors other than …

Abstract As-fabricated (time-zero) variability and mean device aging are nowadays routinely
considered in circuit simulations and design. Time-dependent variability (reliability-related …

Amplitude distribution of random telegraph noise (RTN) in nanoscale CMOS technology is
an open question, with both lognormal and exponential distributions widely reported in …

In this chapter, we present the most important aspects of our recent research work
concerning the low-frequency noise (LFN) characterization and modeling of Fully Depleted …

For realizing of Ge complementary metal-oxide-semiconductor with a Ge gate stack with thin
equivalent oxide thickness, low interface state density (D it) and high reliability. In this paper …

This paper describes the implications of time-dependent threshold voltage variability,
induced by Bias Temperature Instability (BTI) and Random Telegraph Noise (RTN), on the …

NBTI and RTN time-dependent variability is described from a defect-centric perspective. It is
shown that NBTI induced threshold voltage shift (ΔV TH) distribution is governed by a …