Effect of nitrogen content in tunneling dielectric on cell properties of 3-D NAND flash cells
The effect of band engineering by controlling nitrogen content in the tunneling dielectric of
the 3-D NAND flash cells is investigated by comparing various cell properties of the two …
the 3-D NAND flash cells is investigated by comparing various cell properties of the two …
Bimetallic oxide nanoparticles CoxMoyO as charge trapping layer for nonvolatile memory device applications
CW Liu, CL Cheng, SW Huang, JT Jeng… - Applied Physics …, 2007 - pubs.aip.org
The reduced Co x Mo y O bimetallic oxide nanoparticles (BONs) embedded in the hafnium
oxynitride high-k dielectric have been developed by means of the chemical vapor deposition …
oxynitride high-k dielectric have been developed by means of the chemical vapor deposition …
Chemical controllability of charge states of nitrogen-related defects in : First-principles calculations
N Umezawa, K Shiraishi, Y Akasaka, A Oshiyama… - Physical Review B …, 2008 - APS
Relative stabilities of nitrogen-related defects in HfO x N y have been extensively studied in
terms of formation energies by using first-principles calculations. We have found that the two …
terms of formation energies by using first-principles calculations. We have found that the two …
Electrical and Optical Characteristics of SSI-LED Made from Capacitor Containing Tri-Layer WOx Embedded Zr-Doped HfOx Gate Dielectric
WS Lin, Y Kuo - ECS Journal of Solid State Science and …, 2021 - iopscience.iop.org
Solid-state incandescent light emitting devices made from MOS capacitors with the WO x
embedded Zr-doped HfO x gate dielectric were characterized for electrical and optical …
embedded Zr-doped HfO x gate dielectric were characterized for electrical and optical …
Effects of nitrogen atom doping on optical properties and dielectric constant of HfO2 gate oxides
The effect of nitrogen atom doping on the optical properties and dielectric constant of Hf O 2
films has been systematically investigated. Spectroscopic ellipsometry was employed to …
films has been systematically investigated. Spectroscopic ellipsometry was employed to …
Electrical characteristic enhancement of metal–oxide–semiconductor devices by incorporating HfON buffer layer at HfTaSiON/Si interface
CL Cheng, KS Chang-Liao, HC Chang, TK Wang - Solid-state electronics, 2006 - Elsevier
In this work, the electrical characteristic enhancement of HfTaSiON-gated metal–oxide–
semiconductor devices with an additional HfON buffer layer was investigated. By forming a …
semiconductor devices with an additional HfON buffer layer was investigated. By forming a …
Light emission enhancement by embedding nanocrystalline cadmium selenide in amorphous ZrHfO high-k dielectric thin film deposited on silicon wafer
The enhancement of white light emission from the amorphous Zr-doped HfO 2 film on the p-
type silicon wafer with the embedding of a nanocrystalline cadmium selenide layer has been …
type silicon wafer with the embedding of a nanocrystalline cadmium selenide layer has been …
Electrical and reliability characteristics of HfLaTiO-gated metal–oxide–semiconductor capacitors with various Ti concentrations
CL Cheng, JH Horng, YZ Wu - IEEE Transactions on Device …, 2012 - ieeexplore.ieee.org
Electrical and reliability characteristics of metal-oxide-semiconductor (MOS) capacitors with
various-Ti-concentration-doped HfLaTiO/interfacial layer (IL)/P-Si (100) stacked structures …
various-Ti-concentration-doped HfLaTiO/interfacial layer (IL)/P-Si (100) stacked structures …
Composition Effects of Dual-Doped Stacked Dielectrics on Electrical and Reliability Characteristics of Advanced Metal-Oxide-Semiconductor …
CL Cheng, JH Horng, JT Jeng… - IEEE Transactions on …, 2009 - ieeexplore.ieee.org
Metal-oxide-semiconductor (MOS) capacitors with metal-gate/high-k dielectric stacked films
are a promising candidate to provide enhanced device performance. To study these issues …
are a promising candidate to provide enhanced device performance. To study these issues …
Kink effect for 28 nm n–channel field–effect transistors after decoupled plasma nitridation treatment with annealing temperatures
SJ Wang, MC Wang, WD Lee… - International …, 2015 - inderscienceonline.com
The kink effect of drain leakage based on gated diode measurement metrology for the tested
nMOSFETs with 28 nm HK/MG, gate–last and PDA or DPN nitridation processes was …
nMOSFETs with 28 nm HK/MG, gate–last and PDA or DPN nitridation processes was …