[HTML][HTML] Editors' choice—review—conductive forms of mos2 and their applications in energy storage and conversion

D Saha, P Kruse - Journal of The Electrochemical Society, 2020 - iopscience.iop.org
Conductive forms of MoS 2 are important emerging 2D materials due to their unique
combination of properties such as high electrical conductivity, availability of active sites in …

Local electrical characterization of two-dimensional materials with functional atomic force microscopy

S Hussain, K Xu, S Ye, L Lei, X Liu, R Xu, L Xie… - Frontiers of …, 2019 - Springer
Research about two-dimensional (2D) materials is growing exponentially across various
scientific and engineering disciplines due to the wealth of unusual physical phenomena that …

Electrical transport and persistent photoconductivity in monolayer MoS2 phototransistors

A Di Bartolomeo, L Genovese, T Foller… - …, 2017 - iopscience.iop.org
We study electrical transport properties in exfoliated molybdenum disulfide (MoS 2) back-
gated field effect transistors at low drain bias and under different illumination intensities. It is …

MXene Electrode for the Integration of WSe2 and MoS2 Field Effect Transistors

J Xu, J Shim, JH Park, S Lee - Advanced Functional Materials, 2016 - Wiley Online Library
Recently, MXenes, which are 2D early transition metal carbides and carbonitrides, have
attracted wide attention because of their excellent conductivities. Here, the electrode …

MoS2–OH Bilayer-Mediated Growth of Inch-Sized Monolayer MoS2 on Arbitrary Substrates

J Zhu, H Xu, G Zou, W Zhang, R Chai… - Journal of the …, 2019 - ACS Publications
Due to remarkable electronic property, optical transparency, and mechanical flexibility,
monolayer molybdenum disulfide (MoS2) has been demonstrated to be promising for …

Large-Area, Two-Dimensional MoS2 Exfoliated on Gold: Direct Experimental Access to the Metal–Semiconductor Interface

E Pollmann, S Sleziona, T Foller, U Hagemann… - ACS …, 2021 - ACS Publications
Two-dimensional semiconductors such as MoS2 are promising for future electrical devices.
The interface to metals is a crucial and critical aspect for these devices because undesirably …

Interlayer resonant Raman modes in few-layer

N Scheuschner, R Gillen, M Staiger, J Maultzsch - Physical Review B, 2015 - APS
We report two first-order Raman modes in the spectra of few-layer MoS 2 at 286 and 471
cm− 1 that are only observed at excitation energies above 2.4 eV. We show that these …

[HTML][HTML] MoS2 Heterojunctions by Thickness Modulation

M Tosun, D Fu, SB Desai, C Ko, J Seuk Kang… - Scientific reports, 2015 - nature.com
In this work, we report lateral heterojunction formation in as-exfoliated MoS2 flakes by
thickness modulation. Kelvin probe force microscopy is used to map the surface potential at …

Experimental Determination of the Ionization Energies of MoSe2, WS2, and MoS2 on SiO2 Using Photoemission Electron Microscopy

K Keyshar, M Berg, X Zhang, R Vajtai, G Gupta… - ACS …, 2017 - ACS Publications
The values of the ionization energies of transition metal dichalcogenides (TMDs) are
needed to assess their potential usefulness in semiconductor heterojunctions for high …

Layer-Thickness-Dependent Work Function of MoS2 on Metal and Metal Oxide Substrates

C Lattyak, K Gehrke, M Vehse - The Journal of Physical Chemistry …, 2022 - ACS Publications
Transition metal dichalcogenides, such as molybdenum disulfide (MoS2), have unique
electronic and optoelectronic properties that are often altered by environmental effects …