This article reviews the current status of spin dynamics in semiconductors which has
achieved much progress in the recent years due to the fast growing field of semiconductor …

The paper reviews the interplay of Rashba/Dresselhaus spin splittings in various two‐
dimensional systems made of zinc‐blende III–V, wurtzite, and SiGe semiconductors. We …

Device concepts in semiconductor spintronics make long spin lifetimes desirable, and the
requirements put on spin control by proposals for quantum information processing are even …

We fabricated a (110)-oriented vertical-cavity surface-emitting laser (VCSEL) with
GaAs/AlGaAs quantum wells (QWs) and characterized the lasing properties of the VCSEL …

We fabricated and characterized a vertical-cavity surface-emitting laser (VCSEL) based on
(110) InGaAs/GaAs multiple quantum wells (MQWs). Circularly polarized lasing in the (110) …

We formulate a model of a semiconductor quantum dot laser with injection of spin-polarized
electrons. As compared to higher-dimensionality structures, the quantum dot based active …

Abstract Quantum wells in InGaAs/AlGaAs with (110) orientation are attractive as active
layers in spin-controlled lasers with circularly polarized emission, while the spin relaxation …

The correlation between the electron spin relaxation time τs and the hetero-interface
roughness in (110)-oriented GaAs/AlGaAs multiple-quantum wells (MQWs) was investigated …

Epitaxial layers of the Heusler alloy Co 2 FeSi were grown by molecular beam epitaxy on
GaAs (1 1 0) at different growth temperatures T G. Below a transition temperature T trans …

This paper presents an analysis of indium arsenide–gallium antimonide (InAs/GaSb)(110)-
grown superlattices for use as infrared detectors. The analysis shows that InAs/GaSb …