Defect engineering involves manipulating the type, concentration, spatial distribution, or
mobility of defects within a crystalline solid. Defect engineering in semiconductors has …

We investigate the impact of amorphization and C co-implantation on B diffusion and
activation properties after conventional spike rapid thermal annealing (RTA). We observe …

The impact of Si interstitial (Si i) flux suppression on the formation of P junctions by rapid
thermal annealing (RTA) is demonstrated. Here we investigate the role of amorphization …

Isotopically pure semiconductors have important applications for cooling electronic devices
and quantum computing and sensing. Raw materials of sufficiently high isotopic purity are …

The authors have studied the interactions between implant defects and phosphorus diffusion
in crystalline silicon. Defect engineering enables ultrashallow n+∕ p junction formation …

Oxygen vacancies (VO) influence many properties of ZnO in semiconductor devices, yet
synthesis methods leave behind variable and unpredictable VO concentrations. Oxygen …

We investigate the effect of cryogenic temperature implants on electrical junction stability for
ultra shallow junction applications for sub-32 nm technology nodes and beyond. A …

Coimplantation of heterogeneous dopants in materials can be used to control the principal
dopant distribution. We used atom probe tomography (APT) and secondary ion mass …

The continuous improvement in semiconductor technology requires field effect transistor
scaling while maintaining acceptable leakage currents. This study analyzes the effect of …

We present the results of investigation of radiation damage accumulation in GaN during its
sequential co-implantation with fluorine ions of two different energies. This process is proved …