This paper reviews and compares predictions of the Dutta-Horn model of low-frequency
excess (1/f) noise with experimental results for thin metal films, MOS transistors, and …

Spin transistors are a new concept device that unites an ordinary transistor with the useful
functions of a spin (magnetoresistive) device. They are expected to be a building block for …

During the past decade, two-dimensional materials have attracted incredible interest from
the electronic device community. The first two-dimensional material studied in detail was …

Conventional silicon transistor scaling is fast approaching its limits. An extension of the logic
device roadmap to further improve future performance increases of integrated circuits is …

The performance of strained silicon (Si) as the channel material for today's metal-oxide-
semiconductor field-effect transistors may be reaching a plateau. New channel materials …

An ultrathin equivalent oxide thickness (EOT) Al 2 O 3/GeO x/Ge gate stack with a superior
GeO x/Ge metal-oxide-semiconductor (MOS) interface and p-channel metal-oxide …

An electron cyclotron resonance (ECR) plasma postoxidation method has been employed
for forming Al 2 O 3/GeO x/Ge metal-oxide-semiconductor (MOS) structures. X-ray …

This year marks a major materials milestone in the makeup of silicon-based field-effect
transistors: in the microprocessors produced by leading manufacturers, the SiO2 gate …

Silicon photonics defines a significant advancement in the development of highly integrated
devices on a single semiconductor substrate. As a revolutionizing technology it benefits from …

This paper reviews the most important properties of germanium, gives an insight into the
newer techniques and technology for the growth of epitaxial Ge thin layers and focuses on …