Review of self-powered solar-blind photodetectors based on Ga2O3

C Wu, F Wu, H Hu, S Wang, A Liu, D Guo - Materials Today Physics, 2022 - Elsevier
Due to the broad potential applications range in both military and civilian domains, solar-
blind photodetectors based on the ultrawide-bandgap semiconductor Ga 2 O 3, with high …

Photodetectors of 2D materials from ultraviolet to terahertz waves

Q Qiu, Z Huang - Advanced Materials, 2021 - Wiley Online Library
Abstract 2D materials are considered to be the most promising materials for photodetectors
due to their unique optical and electrical properties. Since the discovery of graphene, many …

A strategic review on gallium oxide based deep‐ultraviolet photodetectors: recent progress and future prospects

D Kaur, M Kumar - Advanced optical materials, 2021 - Wiley Online Library
With the use of UV‐C radiation sterilizers on the rise in the wake of the recent pandemic, it
has become imperative to have health safety systems in place to curb the ill‐effects on …

Carrier recombination suppression and transport enhancement enable high‐performance self‐powered broadband Sb2Se3 photodetectors

S Chen, Y Fu, M Ishaq, C Li, D Ren, Z Su, X Qiao… - InfoMat, 2023 - Wiley Online Library
Abstract Antimony selenide (Sb2Se3) is a promising candidate for photodetector
applications boasting unique material benefits and remarkable optoelectronic properties …

High‐Performance Harsh‐Environment‐Resistant GaOX Solar‐Blind Photodetectors via Defect and Doping Engineering

X Hou, X Zhao, Y Zhang, Z Zhang, Y Liu… - Advanced …, 2022 - Wiley Online Library
Abstract Gallium oxide (Ga2O3), with an ultrawide bandgap, is currently regarded as one of
the most promising materials for solar‐blind photodetectors (SBPDs), which are greatly …

Highly sensitive solar-blind deep ultraviolet photodetector based on graphene/PtSe2/β-Ga2O3 2D/3D Schottky junction with ultrafast speed

D Wu, Z Zhao, W Lu, L Rogée, L Zeng, P Lin, Z Shi… - Nano Research, 2021 - Springer
There is an emerging need for high-sensitivity solar-blind deep ultraviolet (DUV)
photodetectors with an ultra-fast response speed. Although nanoscale devices based on Ga …

Review of Ga2O3-based optoelectronic devices

D Guo, Q Guo, Z Chen, Z Wu, P Li, W Tang - Materials Today Physics, 2019 - Elsevier
Abstract Gallium oxide (Ga 2 O 3), with an ultrawide-bandgap of~ 4.9 eV, has attracted
recently much scientific and technological attention due to its extensive future applications in …

Gallium oxide solar-blind ultraviolet photodetectors: a review

J Xu, W Zheng, F Huang - Journal of Materials Chemistry C, 2019 - pubs.rsc.org
In recent years, solar-blind ultraviolet (UV) photodetectors have attracted significant attention
from researchers in the field of semiconductor devices due to their indispensable properties …

Wafer-scale synthesis of wide bandgap 2D GeSe2 layers for self-powered ultrasensitive UV photodetection and imaging

D Wu, R Tian, P Lin, Z Shi, X Chen, M Jia, Y Tian, X Li… - Nano Energy, 2022 - Elsevier
Emerging wide-bandgap 2D GeSe 2 has been considered as a promising candidate for next-
generation ultraviolet (UV) imaging systems, which typically require miniaturization, high …

Ultra‐High Performance Amorphous Ga2O3 Photodetector Arrays for Solar‐Blind Imaging

Y Qin, LH Li, Z Yu, F Wu, D Dong, W Guo… - Advanced …, 2021 - Wiley Online Library
The growing demand for scalable solar‐blind image sensors with remarkable photosensitive
properties has stimulated the research on more advanced solar‐blind photodetector (SBPD) …