Evolving magneto-electric device technologies
Here, several classes of magneto-electric devices, and their possible implementations as
complementary metal-oxide-semiconductor (CMOS) replacements, are discussed. We …
complementary metal-oxide-semiconductor (CMOS) replacements, are discussed. We …
Towards a strong spin–orbit coupling magnetoelectric transistor
Here, we outline magnetoelectric (ME) device concepts based on the voltage control of the
interface magnetism of an ME antiferromagnet gate dielectric formed on a very thin …
interface magnetism of an ME antiferromagnet gate dielectric formed on a very thin …
[HTML][HTML] Space-charge limited conduction in epitaxial chromia films grown on elemental and oxide-based metallic substrates
We study temperature dependent (200–400 K) dielectric current leakage in high-quality,
epitaxial chromia films, synthesized on various conductive substrates (Pd, Pt and V 2 O 3) …
epitaxial chromia films, synthesized on various conductive substrates (Pd, Pt and V 2 O 3) …
An expanded benchmarking of beyond-CMOS devices based on Boolean and neuromorphic representative circuits
The latest results of benchmarking research are presented for a variety of beyond-CMOS
charge-and spin-based devices. In addition to improving the device-level models, several …
charge-and spin-based devices. In addition to improving the device-level models, several …
MESL: Proposal for a Non-volatile Cascadable M agneto-E lectric S pin L ogic
In the quest for novel, scalable and energy-efficient computing technologies, many non-
charge based logic devices are being explored. Recent advances in multi-ferroic materials …
charge based logic devices are being explored. Recent advances in multi-ferroic materials …
Compact modeling and design of magneto-electric transistor devices and circuits
A Verilog-A based model for the magneto-electric field effect transistor (MEFET) device is
implemented and a variety of logic functions based on this device are proposed. These …
implemented and a variety of logic functions based on this device are proposed. These …
VerilogA based compact model of a three-terminal ME-MTJ device
We present the first set of VerilogA based models for Magneto-Electric Magnetic Tunnel
Junction (ME-MTJ) devices. The compact models have been developed in Verilog-A …
Junction (ME-MTJ) devices. The compact models have been developed in Verilog-A …
A Radiation-hardened Triple Modular Redundancy Design Based on Spin-Transfer Torque Magnetic Tunnel Junction Devices
S Zhang, P Dai, N Li, Y Chen - Applied Sciences, 2024 - mdpi.com
Integrated circuits suffer severe deterioration due to single-event upsets (SEUs) in irradiated
environments. Spin-transfer torque magnetic random-access memory (STT-MRAM) appears …
environments. Spin-transfer torque magnetic random-access memory (STT-MRAM) appears …
The spin polarization of palladium on magneto-electric Cr2O3
T Komesu, W Echtenkamp, C Binek… - Journal of Physics …, 2023 - iopscience.iop.org
While induced spin polarization of a palladium (Pd) overlayer on antiferromagnetic and
magneto-electric Cr 2 O 3 (0001) is possible because of the boundary polarization at the Cr …
magneto-electric Cr 2 O 3 (0001) is possible because of the boundary polarization at the Cr …
Nonvolatile memory based architectures using magnetoelectric FETs
Of the numerous beyond complementary metal‐oxide semiconductor (CMOS) devices
investigated, the magnetoelectric field effect transistor (MEFET) has shown promise as a …
investigated, the magnetoelectric field effect transistor (MEFET) has shown promise as a …