Abstract In this work, Al/Al 2 O 3/Ge/p-Si heterostructures were fabricated by e-beam thermal
evaporation. The EDX (energy dispersive X-ray spectroscopy) map visually obtained the …

Use and performance criteria of photonic devices increase in various application areas such
as information and communication, lighting, and photovoltaics. In many current and future …

Control of interfacial physicochemical properties associated with device materials to
minimize the impact of point defects on device performance has been a dominant theme in …

We propose a capacitance measurement scheme that enables quantitative characterization
of ferroelectric thin films integrated on semiconductors. The film defect density is estimated …

Through first-principles calculation using the screened hybrid functional, we investigate the
energetics and electronic structure of substitutional hydrogen (HO) in which one hydrogen …

We derive a complete set of expressions for the MOSFET gate and drain power spectral
densities due to elastic and inelastic trapping/detrapping of channel carriers into the gate …

Using first-principles calculations based on hybrid-density-functional theory, we examine the
energetics and electronic structure of fluorine in α-Al 2 O 3⁠. The F atom can be …

Interface trap density (D it) inside the conduction band of (111)-oriented InAs-on-insulator
(InAs-OI) n-channel metal-oxide-semiconductor field-effect-transistor (nMOSFET) was …

We have attained low leakage current, low interfacial traps, and low border traps by
effectively passivating both p-and n-In0. 53Ga0. 47As (InGaAs) surfaces using the same …

The discovery of ferroelectricity in CMOS-compatible oxides, such as doped hafnium oxide,
has opened new possibilities for electronics by reviving the use of ferroelectric …