The characteristic effects of doping with impurities such as Si, Ge, Se, O, Mg, Be, and Zn on
the electrical and optical properties of GaN-based materials are reviewed. In addition, the …

Abstract Photoluminescence (PL), Raman spectroscopy, and x-ray diffraction are employed
to demonstrate the co-existence of a biaxial and a hydrostatic strain that can be present in …

The effect of Si doping on the strain and microstructure in GaN films grown on sapphire by
metalorganic chemical vapor deposition was investigated. Strain was measured …

The growth of high-quality III-nitrides by plasma-assisted molecular beam epitaxy on Si
(111) substrates is addressed. A combination of optimized AlN buffer layers and a two-step …

(0001)-oriented epitaxial wurtzite III-nitride layers grown on mismatched substrates have no
resolved shear stress on the natural basal and prismatic slip planes; however, strained III …

Si-doped n-type Al x Ga 1− x N alloys were grown by metalorganic chemical vapor
deposition on sapphire substrates. We have achieved highly conductive n-type Al x Ga 1− x …

The effects on the lattice parameters due to incorporation of impurities in GaN are evaluated
using first-principles pseudopotential-density-functional calculations. Both the size effect …

Optical and transport properties of wurtzite GaN layers, grown by plasma-assisted molecular-
beam epitaxy on Si (111) substrates, have been investigated. An emission at 3.455 eV …

The effect of carrier gas on nanomechanical properties of GaN thin films grown on (0001)
sapphire substrates by metal–organic chemical vapor deposition (MOCVD) process, was …

The three volumes of this handbook treat the fundamentals, technology and nanotechnology
of nitride semiconductors with an extraordinary clarity and depth. They present all the …