Ga2O3 is attractive for power devices and solar-blind ultraviolet photodetectors due to its
ultra-wide bandgap, large breakdown field, and favorable stability. However, it is difficult to …

Recently, there is a growing interest in Gallium Oxide (Ga 2 O 3) as a promising
semiconductor material for intended applications in RF, power electronics, and sensors with …

Ga 2 O 3 is an ultrawide bandgap semiconductor with a bandgap energy of 4.5–5.3 eV
(depending on its crystal structure), which is much greater than those of conventional wide …

As a promising ultra-wide bandgap semiconductor, the β-phase of Ga 2 O 3 has attracted
more and more interest in the field of power electronics due to its ultra-wide bandgap (4.8 …

As an ultra-wide bandgap semiconductor, β-Ga 2 O 3 has attracted great attention for high-
power, high-voltage, and optoelectronic applications. However, until now, high-frequency …

Ga2O3 has gained intensive attention for the continuing myth of the electronics as a new-
generation wide bandgap semiconductor, owing to its natural physical and chemical …

This Letter reports a high performance β-Ga 2 O 3 thin channel MOSFET with T gate and
degenerately doped (n++) source/drain contacts regrown by metal organic chemical vapor …

Over the last decade, beta-phase gallium oxide (β-Ga2O3) has developed an extensive
interest for applications such as high-power electronics. Due to its ultrawide bandgap of∼ …

Fundamental research and development of ultra-wide bandgap (UWBG) semiconductor
devices are under way to realize next-generation power conversion and wireless …

This letter reports-(Al x Ga 1-x) 2 O 3/Ga 2 O 3 (AlGaO/GaO) heterostructure FETs (HFETs)
with significant improvement of peak transconductance (gm), current and power gain cutoff …