Epitaxial silicon carbide on silicon. method of coordinated substitution of atoms (a review)
SA Kukushkin, AV Osipov - Russian Journal of General Chemistry, 2022 - Springer
A review of advances in the growth of SiC epitaxial films on silicon is presented. All the main
classical methods used at present to grow SiC films on silicon are described. Their …
classical methods used at present to grow SiC films on silicon are described. Their …
Improved dielectric and non-ohmic properties of (Zn+ Zr) codoped CaCu3Ti4O12 thin films
D Xu, X Yue, J Song, S Zhong, J Ma, L Bao… - Ceramics …, 2019 - Elsevier
The good dielectric and non-ohmic properties of CaCu 3 Ti 4 O 12 and CaCu 2.95 Zn 0.05 Ti
4-x Zr x O 12 (x= 0, 0.05 and 0.10) thin films prepared by a sol-gel method were determined …
4-x Zr x O 12 (x= 0, 0.05 and 0.10) thin films prepared by a sol-gel method were determined …
Electrodeposited epitaxial Cu (100) on Si (100) and lift-off of single crystal-like Cu (100) foils
CM Hull, JA Switzer - ACS applied materials & interfaces, 2018 - ACS Publications
A two-step potential electrodeposition technique is described which gives epitaxial films of
Cu (100) on n-Si (100). Nucleation of epitaxial seeds occurs at− 1.5 VAg/AgCl, whereas the …
Cu (100) on n-Si (100). Nucleation of epitaxial seeds occurs at− 1.5 VAg/AgCl, whereas the …
Effect of the transition porous silicon layer on the properties of hybrid GaN/SiC/por-Si/Si (1 1 1) heterostructures
PV Seredin, H Leiste, AS Lenshin, AM Mizerov - Applied Surface Science, 2020 - Elsevier
Using the complexes of structural and spectroscopic diagnostic techniques, we investigated
the influence of the layer of nanoporous silicon on the practical implementation and certain …
the influence of the layer of nanoporous silicon on the practical implementation and certain …
A new method of growing AlN, GaN, and AlGaN bulk crystals using hybrid SiC/Si substrates
SA Kukushkin, SS Sharofidinov - Physics of the Solid State, 2019 - Springer
The main principles of a new method of growing bulk single-crystal AlN, AlGaN, and GaN
films with thickness from 100 μm and more on silicon substrates with a buffer silicon carbide …
films with thickness from 100 μm and more on silicon substrates with a buffer silicon carbide …
Influence of substrate nitridation conditions and buffer layer structures on the crack-free GaN layers on silicon substrate grown by ammonia-assisted molecular beam …
T Malin, Y Maidebura, V Mansurov, T Gavrilova… - Thin Solid Films, 2024 - Elsevier
It is shown that the nitridation conditions of the silicon substrate are not less important than
the structure of the buffer layer in influencing the crack formation in GaN-on-Si layers grown …
the structure of the buffer layer in influencing the crack formation in GaN-on-Si layers grown …
Growing III–V semiconductor heterostructures on SiC/Si substrates
SS Sharofidinov, SA Kukushkin, AV Red'kov… - Technical Physics …, 2019 - Springer
A three-layer heterostructure consisting of AlN (∼ 0.72 μm thick), AlGaN (∼ 1.82 μm thick),
and GaN (∼ 2.2 μm thick) layers has been grown by hydride–chloride vapor phase epitaxy …
and GaN (∼ 2.2 μm thick) layers has been grown by hydride–chloride vapor phase epitaxy …
Silicon-integrated monocrystalline oxide–nitride heterostructures for deep-ultraviolet optoelectronics
New opportunities for high-performance CMOS-compatible optoelectronic devices have
accelerated the interest in vertically configured device topologies that enable next …
accelerated the interest in vertically configured device topologies that enable next …
Новый метод получения объемных кристаллов AlN, GaN и AlGaN с использованием гибридных подложек SiC/Si
СА Кукушкин, ШШ Шарофидинов - Физика твердого тела, 2019 - mathnet.ru
Представлены основные положения нового метода выращивания объемных,
толщиной от 100$\mu $ m и более, монокристаллических пленок AlN, AlGaN и GaN на …
толщиной от 100$\mu $ m и более, монокристаллических пленок AlN, AlGaN и GaN на …
Comparative study of nanostructured ultra-thin AlGaN/GaN heterostructures grown on hybrid compliant SiC/porSi substrates by molecular beam epitaxy with plasma …
PV Seredin, D Goloshchapov, AO Radam, AS Lenshin… - Optical Materials, 2022 - Elsevier
This study demonstrates the advantages of using a hybrid compliant substrate containing a
porous silicon (porSi) layer, obtained through electrochemical etching of the original silicon …
porous silicon (porSi) layer, obtained through electrochemical etching of the original silicon …