A review of advances in the growth of SiC epitaxial films on silicon is presented. All the main
classical methods used at present to grow SiC films on silicon are described. Their …

The good dielectric and non-ohmic properties of CaCu 3 Ti 4 O 12 and CaCu 2.95 Zn 0.05 Ti
4-x Zr x O 12 (x= 0, 0.05 and 0.10) thin films prepared by a sol-gel method were determined …

A two-step potential electrodeposition technique is described which gives epitaxial films of
Cu (100) on n-Si (100). Nucleation of epitaxial seeds occurs at− 1.5 VAg/AgCl, whereas the …

Using the complexes of structural and spectroscopic diagnostic techniques, we investigated
the influence of the layer of nanoporous silicon on the practical implementation and certain …

The main principles of a new method of growing bulk single-crystal AlN, AlGaN, and GaN
films with thickness from 100 μm and more on silicon substrates with a buffer silicon carbide …

It is shown that the nitridation conditions of the silicon substrate are not less important than
the structure of the buffer layer in influencing the crack formation in GaN-on-Si layers grown …

A three-layer heterostructure consisting of AlN (∼ 0.72 μm thick), AlGaN (∼ 1.82 μm thick),
and GaN (∼ 2.2 μm thick) layers has been grown by hydride–chloride vapor phase epitaxy …

New opportunities for high-performance CMOS-compatible optoelectronic devices have
accelerated the interest in vertically configured device topologies that enable next …

Представлены основные положения нового метода выращивания объемных,
толщиной от 100$\mu $ m и более, монокристаллических пленок AlN, AlGaN и GaN на …

This study demonstrates the advantages of using a hybrid compliant substrate containing a
porous silicon (porSi) layer, obtained through electrochemical etching of the original silicon …