Atomic layer deposition of conductive and semiconductive oxides
B Macco, WMM Kessels - Applied Physics Reviews, 2022 - pubs.aip.org
Conductive and semiconductive oxides constitute a class of materials of which the electrical
conductivity and optical transparency can be modulated through material design (eg, doping …
conductivity and optical transparency can be modulated through material design (eg, doping …
Nanostructured metal sulphides synthesized by microwave-assisted heating: A review
DK Becerra-Paniagua, EB Díaz-Cruz… - Journal of Materials …, 2022 - Springer
In recent decades, nanostructured metal sulphides (MSs) have gained great interest due to
their extensive applications ranging from optoelectronic devices to biomedical applications …
their extensive applications ranging from optoelectronic devices to biomedical applications …
Advances in atomic layer deposition of metal sulfides: from a precursors perspective
Development at the nanoscale has established diverse and complex structures with the help
of a growing selection of materials to choose from. Among the major developments that has …
of a growing selection of materials to choose from. Among the major developments that has …
Low-temperature growth of crystalline Tin (II) monosulfide thin films by atomic layer deposition using a liquid divalent tin precursor
In this study, better-quality stoichiometric SnS thin films were prepared by atomic layer
deposition (ALD) using a liquid divalent Sn precursor, N, N′-di-t-butyl-2-methylpropane-1 …
deposition (ALD) using a liquid divalent Sn precursor, N, N′-di-t-butyl-2-methylpropane-1 …
Growth mechanism and film properties of atomic-layer-deposited titanium oxysulfide
JGA van Kasteren, SB Basuvalingam… - Chemistry of …, 2022 - ACS Publications
In this work, atomic layer deposition (ALD) has been employed to prepare titanium
oxysulfide (TiO x S y) thin films. Compositional control was achieved through a supercycle …
oxysulfide (TiO x S y) thin films. Compositional control was achieved through a supercycle …
Mixed‐Anion Compounds: An Unexplored Playground for ALD Fabrication
TS Tripathi, M Karppinen - Advanced Materials Interfaces, 2021 - Wiley Online Library
For decades the most successful approach towards new inorganic material innovations for
next‐generation devices has been to manipulate the cation composition. As this cation …
next‐generation devices has been to manipulate the cation composition. As this cation …
Exchange Reactions during Atomic Layer Deposition of Ternary Group 13 Oxides and Nitrides
I Cho, B Shong - ACS Applied Electronic Materials, 2024 - ACS Publications
Due to interest in thin films of oxides and nitrides of group 13 elements (Al, Ga, and In) and
their multicomponent combinations, their atomic layer deposition (ALD) processes are being …
their multicomponent combinations, their atomic layer deposition (ALD) processes are being …
Study of the Effect of Low-Energy Irradiation with O2+ Ions on Radiation Hardening and Modification of the Properties of Thin TiO2 Films
A Kozlovskiy, D Shlimas, I Kenzhina… - Journal of Inorganic and …, 2021 - Springer
The paper presents the results of a systematic study of the effect of exposure to low-energy
O 2+ ions on the structural, optical, mechanical properties, as well as resistance to …
O 2+ ions on the structural, optical, mechanical properties, as well as resistance to …
Surface Chemical Reactions During Atomic Layer Deposition of Zinc Oxynitride (ZnON)
TT Ngoc Van, B Shong - Electronic Materials Letters, 2024 - Springer
Atomic layer deposition (ALD) is a promising technique for fabricating high-quality thin films.
For improving the process conditions and material quality of ALD, understanding the surface …
For improving the process conditions and material quality of ALD, understanding the surface …
Synthesis of Novel Unsymmetric Strontium Complexes Containing Aminoalkoxides
Abstract Heteroleptic Sr complexes,[Sr (dmamp)(btsa)] 2⋅ DME (1),[Sr (dmamb)(btsa)] 2⋅
DME (2),[Sr (dmamp)(hfac)] 3⋅ DME (3),[Sr (dmamb)(hfac)] 3⋅ DME (4),[Sr (dmamp)(tmhd)] …
DME (2),[Sr (dmamp)(hfac)] 3⋅ DME (3),[Sr (dmamb)(hfac)] 3⋅ DME (4),[Sr (dmamp)(tmhd)] …