Silicon carbide (SiC) power devices are promising in industrial applications. Junction
temperature monitoring is greatly significant for improving the reliability of devices and …

Junction temperature monitoring is the basis of high reliability operation for silicon carbide
(SiC) devices, since thermal stress is the dominating aging factor. Conventional thermal …

Due to the excellent silicon carbide (SiC) material characteristics, SiC mosfet s can operate
at extremely high temperatures and can be used in harsh environment applications. In this …

This article puts forward a novel online method to measure the junction temperature () of SiC
MOSFETs. In this method, the voltage spikes in the common source stray inductance are …

The junction temperature and aging levels are critical factors contributing to power device
failures. Existing methods commonly employ electrical parameters as indicators for their …

Modern power and energy systems rely heavily on power electronics converters. The most
significant component of these converters is the power semiconductor switching devices …

Online accurate junction temperature monitoring improves the reliability of power converters
throughout the lifetime of SiC MOSFETs. Without the correction, the methods based on the …

In this letter, we propose a novel online converter-level junction temperature T j evaluation
method for insulated gate bipolar transistors (IGBTs) based on the common power loop …

Real-time measurement of junction temperature is critical for high reliability operation of
power devices. The process of SiC MOSFETs turn-on is very short. The rising edge of the …

The turn-on change rate of drain current di DS (on)/dt is an electrical parameter that is
suitable for the online monitoring of junction temperature in SiC MOSFETs. In practical …