Band parameters for III–V compound semiconductors and their alloys
At present, III–V compound semiconductors provide the materials basis for a number of well-
established commercial technologies, as well as new cutting-edge classes of electronic and …
established commercial technologies, as well as new cutting-edge classes of electronic and …
[图书][B] Physics of quantum well devices
BR Nag - 2001 - books.google.com
Quantum well devices have been the objects of intensive research during the last two
decades. Some of the devices have matured into commercially useful products and form part …
decades. Some of the devices have matured into commercially useful products and form part …
[图书][B] The MOCVD Challenge: Volume 2: A Survey of GaInAsP-GaAs for photonic and electronic device applications
M Razeghi - 1995 - taylorfrancis.com
The MOCVD Challenge: Volume 2, A Survey of GaInAsP-GaAs for Photonic and Electronic
Device Applications focuses on GaAs systems and devices grown by MOCVD, specifically …
Device Applications focuses on GaAs systems and devices grown by MOCVD, specifically …
[图书][B] Spontaneous ordering in semiconductor alloys
A Mascarenhas - 2002 - books.google.com
This book presents a comprehensive account of the phenomenon of spontaneous ordering.
The phenomenon, which can be categorized as a self-organized process, is observed to …
The phenomenon, which can be categorized as a self-organized process, is observed to …
Tunneling injection lasers: A new class of lasers with reduced hot carrier effects
P Bhattacharya, J Singh, H Yoon… - IEEE journal of …, 1996 - ieeexplore.ieee.org
In conventional quantum-well lasers, carriers are injected into the quantum wells with quite
high energies. We have investigated quantum-well lasers in which electrons are injected …
high energies. We have investigated quantum-well lasers in which electrons are injected …
[PDF][PDF] Study of indium tin oxide (ITO) for novel optoelectronic devices
SA Bashar - UMIST, Manchester, 1998 - Citeseer
Abstract Indium Tin Oxide (ITO) films were deposited on a number of semi-conductor
materials using reactive rf sputtering technique to form both rectifying Schottky and ohmic …
materials using reactive rf sputtering technique to form both rectifying Schottky and ohmic …
Band offset of GaAs/In0.48Ga0.52P measured under hydrostatic pressure
J Chen, JR Sites, IL Spain, MJ Hafich… - Applied physics …, 1991 - pubs.aip.org
Low‐temperature photoluminescence spectra of an In0. 48Ga0. 52P alloy and ap‐type
GaAs/In0. 48Ga0. 52P multiple quantum well, both grown by molecular beam epitaxy, have …
GaAs/In0. 48Ga0. 52P multiple quantum well, both grown by molecular beam epitaxy, have …
Comparison and competition between MCT and QW structure material for use in IR detectors
SC Shen - Microelectronics Journal, 1994 - Elsevier
This paper compares mercury cadmium telluride (MCT) with quantum well structures as
infrared detection materials, especially for 8–14 μm. The fundamental properties and …
infrared detection materials, especially for 8–14 μm. The fundamental properties and …
Plasma and wet chemical etching of In0.5Ga0.5P
JR Lothian, JM Kuo, F Ren, SJ Pearton - Journal of electronic materials, 1992 - Springer
Dry and wet chemical etching of epitaxial In 0, 5 Ga 0.5 P layers grown on GaAs substrates
by gas-source molecular beam epitaxy have been investigated. For chlorine-based dry etch …
by gas-source molecular beam epitaxy have been investigated. For chlorine-based dry etch …
Evidence of type‐II band alignment at the ordered GaInP to GaAs heterointerface
Q Liu, S Derksen, A Lindner, F Scheffer… - Journal of applied …, 1995 - pubs.aip.org
Interfacial characteristics of Ga0. 51In0. 49P/GaAs heterostructures grown by metal‐organic
vapor‐phase epitaxy in the temperature range from 600° C to 730° C were studied …
vapor‐phase epitaxy in the temperature range from 600° C to 730° C were studied …